The Neolithography Consortium

Published

June 1, 2000

Author(s)

James E. Potzick

Abstract

The role of process simulation in microlithography is becoming an increasingly important part of process control as wafer feature sizes become smaller than the exposure wavelength, because the pattern transfer from photomask to wafer is nonlinear. An important factor hindering the increased use of simulation applications, however, is their inclination to be standalone applications not easily integrated into the overall process. These observations have led to the concept of The Neolithography Consortium. Neolithography is a realization and acceptance that the pattern on the photomask is not replicated exactly on the wafer because of diffraction effects, subresolution mask features and imperfections, and other effects. It is characterized by the full integration of process simulation and metrology into the IC microlithography process, leading to a comprehensive and logical approach to photomask design and wafer exposure. All of the relevant optical projection, resist exposure and development, and etch parameters, and resolution enhancement techniques, are optimized and incorporated into the photomask design before the first wafer is printed.

Proceedings Title

Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography XIV, Neal T. Sullivan, Editor

Volume

3998

Conference Dates

February 28, 2000

Conference Location

Santa Clara, CA

Conference Title

Advanced Technology/Late-Breaking Developments

Pub Type

Conferences

Keywords

metrology, microlithography, neolithography, photomask, process control, process optimization, simulation

Citation

Potzick, J. (2000), The Neolithography Consortium, Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography XIV, Neal T. Sullivan, Editor, Santa Clara, CA (Accessed April 25, 2024)