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Displaying 26 - 50 of 296

Comparison of 4.5 kV SiC JBS and Si PiN Diodes for 4.5 kV Si IGBT Anti-parallel Diode Applications

March 10, 2011
Author(s)
Tam H. Duong, Allen R. Hefner Jr., Karl Hobart, Sei-Hyung Ryu, David Grider, David W. Berning, Jose M. Ortiz, Eugene Imhoff, Jerry Sherbondy
A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of both

Computer-Controlled Thermal Cycling Tool to Aid in SiC Module Package Characterization

June 30, 2010
Author(s)
Madelaine H. Hernandez, Jose M. Ortiz, Brian J. Grummel, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, Patrick McCluskey
A software-controlled thermal cycling test system developed for SiC module package characterization is presented. Its interface permits the flexible definition of testing parameters like variable data acquisition rates and customizable cycle transitions