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Displaying 26 - 50 of 148

NIST Framework and Roadmap for Smart Grid Interoperability Standards, Release 1.0

January 10, 2010
Author(s)
George W. Arnold, David A. Wollman, Gerald FitzPatrick, Dean Prochaska, David Holmberg, David H. Su, Allen R. Hefner Jr., Nada T. Golmie, Tanya L. Brewer, Mark Bello, Paul A. Boynton
Under the Energy Independence and Security Act (EISA) of 2007, the National Institute of Standards and Technology (NIST) is assigned "primary responsibility to coordinate development of a framework that includes protocols and model standards for

High-Voltage Capacitance Measurement System for SiC Power MOSFETs

September 24, 2009
Author(s)
Parrish Ralston, Tam H. Duong, Nanying Yang, David W. Berning, Colleen E. Hood, Allen R. Hefner Jr., Kathleen Meehan
Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can perform

Power Conditioning System Technologies for High-Megawatt Fuel Cell Plants

August 7, 2008
Author(s)
Allen R. Hefner Jr.
High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE

Electro-Thermal Simulation of a 100 A, 10 kV Half-Bridge SiC MOSFET/JBS Power Module

June 13, 2008
Author(s)
Tam H. Duong, Jose M. Ortiz, R. N. Raju, Allen R. Hefner Jr.
This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules. The power modules are being developed by the DARPA WBGS-HPE Phase II program

Thermal Network Component Models for 10 kV SiC Power Module Packages

June 13, 2008
Author(s)
Jose M. Ortiz, Madelaine H. Hernandez, Tam H. Duong, Scott G. Leslie, Allen R. Hefner Jr.
The DARPA WBGS-HPE program is developing 100 A, 10 kV SiC power modules to demonstrate the viability of a 2.75 MVA Solid State Power Substation that uses 10 kV, 20 kHz switching-capable devices. Thermal network component models for these modules are

High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules

June 2, 2008
Author(s)
David W. Berning, Tam H. Duong, Jose M. Ortiz, Angel Rivera, Allen R. Hefner Jr.
A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have shown

Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules

March 3, 2008
Author(s)
Allen R. Hefner Jr.
Abstract: The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, 2.75

Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module

February 24, 2008
Author(s)
Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr., Jose M. Ortiz
This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switches

Experimental Evaluation of SiC PiN Diode Forward Bias Degradation and Long Term Stability

June 21, 2007
Author(s)
Madelaine H. Hernandez, Adwoa Akuffo, Colleen E. Hood, Jose M. Ortiz, Allen R. Hefner Jr.
New automated metric systems and procedures have been developed and introduced in order to evaluate the long stability of SiC PiN diodes, and long term stability results are presented for 10 kV SiC PiN diodes that are made using a new low degradation