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Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions

Published

Author(s)

Leonardo Hillkirk, Allen R. Hefner Jr., Robert W. Dutton, Stephen B. Bayne, Heather O'Brien

Abstract

An electro-thermal, transient device simulation study of Silicon Carbide (SiC) power thyristors operating in a pulsed-power circuit at extremely high current density have been carried out within the drift-diffusion approximation and classical heat generation and transport theory using MEDICI [1]. The convergence problems normally associated with TCAD simulations of SiC bipolar devices were overcame without artificially increasing the free carrier concentration by optical carrier generation, or by increasing the initial temperature (thermal carrier generation). The simulation results closely predict the actual operating conditions of the SiC thyristor in the pulsed-power circuit, and are used to interpret the results of experimental failure limit studies [2]. It is shown that TCAD simulations can realistically predict the electric and thermal properties of complex SiC bipolar semiconductor devices operating under fast transient, pulsed-power conditions.
Proceedings Title
Simulation of Semiconductor Processes and Devices
Volume
12
Conference Dates
September 25-27, 2007
Conference Location
Vienna, 1, AU

Keywords

electro-thermal transient simulation, pulsed-power circuit switching, SiC thyristor

Citation

Hillkirk, L. , Hefner Jr., A. , Dutton, R. , Bayne, S. and O'Brien, H. (2007), Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions, Simulation of Semiconductor Processes and Devices, Vienna, 1, AU, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32695 (Accessed May 17, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created September 29, 2007, Updated October 12, 2021