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Displaying 51526 - 51550 of 74165

Voids and Clusters in Expanded Water

January 1, 1999
Author(s)
Raymond D. Mountain
Molecular dynamics simulations of water at elevated temperatures and reduced densities relative to ambient conditions are used to examine the size distributions of suitably defined hydrogen bonded clusters, physical clusters, and voids. The cluster

Vorticity Elongation in Sheared Polymeric Emulsions

January 1, 1999
Author(s)
Erik K. Hobbie, Kalman D. Migler
Stroboscopic video microscopy is used to study the shear-induced deformation of micron-size polystyrene droplets dispersed in a continuous phase of polyethylene. We observe a rich variety of droplet shapes as a function of shear rate and viscosity ratio

Warm-Hip Compaction of Attrition-Milled Iron Alloy Powders

January 1, 1999
Author(s)
J C. Rawers, Frank S. Biancaniello, Rodney D. Jiggetts, Richard J. Fields, Maureen E. Williams
Warm-HIP (Hot-Isostatic-Pressure) compaction of attrition-milled iron alloy powders resulted in production of high strength, fully-dense compacts of nanostructured iron alloy powders. Commercial development of nanostructured materials has been largely

A New Technique to Extract TDDB Acceleration Parameters From Fast Q bd Tests

December 31, 1998
Author(s)
Y Chen, John S. Suehle, B. Shen, J B. Bernstein, C. Messick, P Chaparala
A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant current injection breakdown tests. This is the first time that an accurate

Chaos

December 31, 1998
Author(s)
Richard L. Kautz

Dopant Characterization Round-Robin Study Performed on Two-Dimensional Test Structures Fabricated at Texas Instruments

December 31, 1998
Author(s)
J. Vahakangas, Markku Lahti, M C. Chang, H Edward, C F. Machala, R S. Martin, V Zavyalov, J S. McMurray, C. C. Williams, P DeWolf, Vandevorst, D. Venables, S S. Neogi, D L. Ottaviani, Joseph Kopanski, J F. Machiando, Brian G. Rennex, J N. Nxulamo, Y Li, D J. Thomson
The lack of a two-dimensional (2D) dopant standard, and hence, a priori knowledge of dopant distribution makes it impossible to unambiguously judge accuracy of any experimental or theoretical effort to characterize silicon doping in two dimensions

Extraction of Sheet-Resistance from Four-Terminal Sheet Resistors in Monocrystalline Films Having Non-Planar Geometries

December 31, 1998
Author(s)
Michael W. Cresswell, Nadine Guillaume, Richard A. Allen, William F. Guthrie, Rathindra Ghoshtagore, James C. OwenI II, Z. Osborne, N. Sullivan, Loren W. Linholm
This paper describes methods for the extraction of sheet resistance from V/I measurements made on four-terminal sheet resistors incorporated into electrical linewidth test structures patterned with non-planar geometries in monocrystalline silicon-on

Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions

December 31, 1998
Author(s)
Chien-Chung Shen, Allen R. Hefner Jr., David W. Berning, J B. Bernstein
The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Revers
Displaying 51526 - 51550 of 74165
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