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A New Technique to Extract TDDB Acceleration Parameters From Fast Qbd Tests

Published

Author(s)

Y Chen, John S. Suehle, B. Shen, J B. Bernstein, C. Messick, P Chaparala

Abstract

A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant current injection breakdown tests. This is the first time that an accurate correlation of the highly accelerated breakdown tests to long-term TDDB tests has been presented.
Proceedings Title
Proc., 1997 Integrated Reliability Workshop
Conference Dates
October 13-16, 1997
Conference Location
Lake Tahoe, CA, USA

Keywords

charge-to-breakdown, dielectric breakdown, gate oxide, reliability

Citation

Chen, Y. , Suehle, J. , Shen, B. , Bernstein, J. , Messick, C. and Chaparala, P. (1998), A New Technique to Extract TDDB Acceleration Parameters From Fast Q<sub>bd</sub> Tests, Proc., 1997 Integrated Reliability Workshop, Lake Tahoe, CA, USA (Accessed June 20, 2024)

Issues

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Created December 30, 1998, Updated October 12, 2021