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NIST Authors in Bold

Displaying 50051 - 50075 of 73697

Semiconductor Device Temperature Measurements Using Electrical Parameters

May 1, 1999
Author(s)
David L. Blackburn
The purpose of this paper is to describe the use of semiconductor device electrical parameters for measuring the temperature of a device. Included are discussions of the material and device parameters used as thermometers and an examination of the accuracy

SIMnet - a Collaborative Tool for Metrology in the Americas

May 1, 1999
Author(s)
Piotr S. Filipski, Nile M. Oldham
The use of video conferencing equipment used with the Internet to facilitate international comparisons and collaborations is described. The system employs standard hardware and software at a number of National Metrology Institutes within the Americas and a

Simple Test Procedure for Image-Based Biometric Verification Systems

May 1, 1999
Author(s)
Charles L. Wilson, R. McCabe
This report discusses a simple test method for image-based biometric verification systems. A fingerprint based computer login system is used as an example of the process used in this test method. Ideally, these tests should be performed on standard

Specular Electron Scattering in Metallic Thin Films

May 1, 1999
Author(s)
William F. Egelhoff Jr., P J. Chen, Cedric J. Powell, D Parks, F Serpa, Robert McMichael, D Martien, A. E. Berkowitz
Specular electron scattering at the surface of metallic thin films is an important phenomenon for a class of magnetic multilayers known as giant magnetoresistance (GMR) spin valves. In the very best GMR spin valves, a significant part of the GMR effect is

Tensile Creep and Rupture of Silicon Nitride

May 1, 1999
Author(s)
Ralph Krause, William E. Luecke, J French, B Hockey, Sheldon M. Wiederhorn
We have characterized the tensile creep, rupture lifetime, and cavitation behavior of a commercial, gas-pressure-sintered silicon nitride in the temperature range 1150 to 1400 C and stress range 70 to 400 MPa. Individual creep curves generally show primary

Test Procedure Development for Residential Dishwashers

May 1, 1999
Author(s)
Natascha S. Milesi-Ferretti
It has been recognized that the current Department of Energy (DOE) dishwasher test procedure is inadequate in testing soil sensing dishwashers. As a result, DOE proposed that NIST evaluate the dishwasher test procedure as a part of their Appliance

The Formation and Behavior of Particles in Silane Discharges

May 1, 1999
Author(s)
Alan Gallagher
Particle growth in silane RF discharges and the incorporation of particles into hydrogenated-amorphous-silicon (a-Si: H) devices is described. Measurements of particle density and growth in a silane RF plasma, for particle diameters of 8-50 nm, are

The Local Structure of Ferroelectric Pb 1-x Ge x Te

May 1, 1999
Author(s)
Bruce D. Ravel, Eric J. Cockayne, K M. Rabe
The narrow band-gap semiconductor Pb_{1-x}Ge_xTe has a low-temperature ferroelectric rhombohedral phase whose average structure is a distorted rock salt structure. We have measured the Extended X-ray-Absorption Fine-Structure spectra of Pb_{1-x}Ge_xTe with

The National Semiconductor Metrology Program, Project Portfolio, FY 1999

May 1, 1999
Author(s)
Stephen Knight, A D. Settle-Raskin
Established in 1994, the National Semiconductor Metrology Program (NSMP) narrows the ever-present gap between the kind of metrology the semiconductor industry needs and what it is able to do. Meeting this challenge is a real feat because the industry tends

The NIST Length Scale Interferometer

May 1, 1999
Author(s)
John S. Beers, William B. Penzes
The National Institute of Standards and Technology (NIST) interferometer for measuring graduated length scales has been in use since 1965. It was developed in response to the redefinition of the meter in 1960 from the prototype platinum-iridium bar to the
Displaying 50051 - 50075 of 73697
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