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Multifunctional Optical In Situ Monitoring of Semiconductor Film Growth

Published

Author(s)

Kristine A. Bertness, S. P. Hays, Robert K. Hickernell

Abstract

We have modifed a normal-incidence optical reflectance spectroscopy system to allow rapid switching between the measurement of sample reflectance and sample emission.
Proceedings Title
Proc., Mat. Res. Soc. Symp. on Epitaxial Growth-Principles and Applications
Volume
570
Issue
18
Conference Dates
April 5-8, 1999
Conference Location
San Francisco, CA

Keywords

in situ monitoring, molecular beam epitaxy, pyrometry, reflectance spectroscopy

Citation

Bertness, K. , Hays, S. and Hickernell, R. (1999), Multifunctional Optical In Situ Monitoring of Semiconductor Film Growth, Proc., Mat. Res. Soc. Symp. on Epitaxial Growth-Principles and Applications, San Francisco, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=24323 (Accessed June 23, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 31, 1999, Updated October 12, 2021