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Displaying 1251 - 1275 of 2289

THz Spectroscopic Study of Iron Oxide Layers within Steel-Reinforced Structural Components

September 26, 2011

Author(s)

Virgil Provenzano, Shin G. Chou

… THz Spectroscopic Study of Iron Oxide Layers within Steel-Reinforced Structural Components …

Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry

May 28, 2010

Author(s)

Nhan V. Nguyen, Oleg A. Kirillov, John S. Suehle

… Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission …

Morphology, structure, and nucleation of out-of-phase boundaries (OPBs) in epitaxial films of layered oxides

June 1, 2007

Author(s)

M A. Zurbuchen, J Lettieri, Y Jia, A H. Carim, S K. Streiffer, D G. Schlom

… boundaries (OPBs) in epitaxial films of layered oxides …

Simplified Model for Soot Formation and Oxidation in CFD Simulation of Non-Premixed Hydrocarbon Flames.

December 1, 2005

Author(s)

C W. Lautenberger, J L. Deris, N A. Dembsey, J R. Barnett, Howard R. Baum

… Simplified Model for Soot Formation and Oxidation in CFD Simulation of Non-Premixed Hydrocarbon …

Influence of Particle Oxide Coating on Light Scattering by Submicron Metal Particles on Silicon Wafers

January 1, 2004

Author(s)

J H. Kim, S H. Ehrman, Thomas Germer

… Influence of Particle Oxide Coating on Light Scattering by Submicron Metal …

Thermophysical Properties of Nitrogen Trifuoride, Ethylene Oxide, and Trimethyl Gallium, from Speed-of-Sound.

July 1, 2002

Author(s)

John J. Hurly

… Thermophysical Properties of Nitrogen Trifuoride, Ethylene Oxide, and Trimethyl Gallium, from Speed-of-Sound. …

Structural Studies of Pulsed-Laser-Deposited Ba 4 Fe 4 Ti 3 0 16 Oxide Films

June 1, 2000

Author(s)

Leonid A. Bendersky, R Maier, J L. Cohn, J J. Neumeier

… Studies of Pulsed-Laser-Deposited Ba 4 Fe 4 Ti 3 0 16 Oxide Films …

Oxidative Coupling of Small Oligothiophenes and Oligopyrroles in Water in the Presence of Cyclodextrin. Pulse Radiolysis Investigations

December 1, 1999

Author(s)

L Guyard, P Hapiot, M Jouini, J -. Lacrois, C Lagrost, Pedatsur Neta

… Oxidative Coupling of Small Oligothiophenes and Oligopyrroles …

Synthesis and Characterization of Self-assembled Monolayers of Alkylated 1-Thiahexa(ethylene oxide) Compounds on Gold

November 24, 1998

Author(s)

David J. Vanderah, Curtis W. Meuse, Vitalii I. Silin, Anne L. Plant

… Self-assembled Monolayers of Alkylated 1-Thiahexa(ethylene oxide) Compounds on Gold …

The Limiting Role of Iodide Oxidation in cis-Os(dcb) 2 (CN) 2 / TiO 2 Photoelectrochemical Cells

January 1, 1998

Author(s)

M Alebbi, C A. Bignozzi, T A. Heimer, G M. Hasselmann, G J. Meyer

… The Limiting Role of Iodide Oxidation in cis-Os(dcb) 2 (CN) 2 / TiO 2 …

Oxidative DNA Base Damage and Antioxidant Enzyme Levels in Childhood Acute Lymphoblastic Leukemia

October 27, 1997

Author(s)

S. Senturker, B. Karahalil, M. Inal, H. Yilmaz, H. Muslumanoglu, G. Gedikoglu, M Miral Dizdar

… Oxidative DNA Base Damage and Antioxidant Enzyme Levels in …

Polarization Characteristics of Silicon Photodiodes and Its Dependence on Oxide Thickness in the Far UV Region

January 1, 1996

Author(s)

T Saito, L R. Hughey, James E. Proctor, Thomas R. O'Brian

… of Silicon Photodiodes and Its Dependence on Oxide Thickness in the Far UV Region …

Polarization Characteristics of Silicon Photodiodes and Its Dependence on Oxide Thickness in the Far UV Region

January 1, 1996

Author(s)

T Saito, L R. Hughey, James E. Proctor, Thomas R. O'Brian

… of Silicon Photodiodes and Its Dependence on Oxide Thickness in the Far UV Region …

Polarization Characteristics of Silicon Photodiodes and Its Dependence on Oxide Thickness in the Far UV Region,

January 1, 1996

Author(s)

T Saito, L R. Hughey, James E. Proctor, T R. And o'brian

… of Silicon Photodiodes and Its Dependence on Oxide Thickness in the Far UV Region, …

Effect of Implant Dose on Formation of Buried Oxide Si Islands in Low-Dose SIMOX

December 31, 1995

Author(s)

S. Bagchi, J. H. Lee, S. J. Krause, Peter Roitman

… Effect of Implant Dose on Formation of Buried Oxide Si Islands in Low-Dose SIMOX …

Tin Oxide Gas Sensor Fabricated Using CMOS Micro-Hotplates and In-Situ Processing

January 20, 1993

Author(s)

John S. Suehle, Richard E. Cavicchi, Michael Gaitan, Stephen Semancik

… Tin Oxide Gas Sensor Fabricated Using CMOS Micro-Hotplates and …

Copper M^dII,III X-Ray Emission Spectra of Copper Oxides and the Bismuth Cuprate Superconductor,

January 1, 1992

Author(s)

D R. Mueller, J S. Wallace, D L. Ederer, J J. Jia, W L. O'brien, Q -. Dong, T A. Callcott

… Copper M^dII,III X-Ray Emission Spectra of Copper Oxides and the Bismuth Cuprate Superconductor, …

Effect of Annealing Ambient on the Removal of Oxide Precipitates in High-Dose Oxygen-Implanted Silicon

December 2, 1991

Author(s)

S. Seraphin, S. J. Krause, Peter Roitman, David S. Simons, B. F. Cordts

… Effect of Annealing Ambient on the Removal of Oxide Precipitates in High-Dose Oxygen-Implanted Silicon …

Direct Experimental Evidence for a Dominant Hole Trapping Center in SIMOX Oxides, Extended Abstract

December 31, 1990

Author(s)

J. F. Conley, Patrick M. Lenahan, Peter Roitman

… Evidence for a Dominant Hole Trapping Center in SIMOX Oxides, Extended Abstract …

A supplementary bibliography of kinetic data on gas phase reactions of nitrogen, oxygen, and nitrogen oxides:

January 1, 1973

Author(s)

Francis Westley

… on gas phase reactions of nitrogen, oxygen, and nitrogen oxides: …

Pre-Conceptual Design of the NIST Neutron Source

April 16, 2023

Author(s)

Dagistan Sahin, Osman Celikten, Jeremy Cook, Abdullah Weiss, Thomas Newton, David Diamond, Charles F. Majkrzak, Hubert King, Joy Shen, Anil Gurgen, Lap-Yan Cheng, Peter Kohut, Cihang Lu, Athi Varuttamaseni

… research reactor utilizing high assay low enriched uranium (HALEU), curved, MTR-type fuel plates, is being …

MULTI-COLLECTOR CONFIGURATION CONSIDERATIONS AND SUBSTRATE RELATIVE SENSITIVITY FACTOR EFFECTS FOR AGE-DATING MEASUREMENTS OF PARTICLES BY LARGE GEOMETRY SECONDARY ION MASS SPECTROMETRY

October 1, 2021

Author(s)

Todd Williamson, David S. Simons, John D. Fassett

… to broaden the applicability of AD measurements to single uranium-containing particles using large geometry secondary …

Impact of near interface defects on NO annealed SiC MOSFET mobility

July 2, 2025

Author(s)

Yu Xin Wen, Bing-Yue Tsui, Kin Cheung

A series of recent studies asserted that near-interface-traps (NITs) are introduced by the post-oxidation NO annealing process and these NITs are the cause for the low mobility of NO annealed SiC MOSFETs. We use fast Id-Vg measurement to directly probe

A field-effect transistor-based room-temperature quantum current source

May 4, 2023

Author(s)

Kin (Charles) Cheung, Barry J O'Sullivan

… quantum current source based on nanoscale metal-oxide-semiconductor-Field-Effect-Transistor (MOSFET). Using …

Scattered Light Analysis of Birefringent Coatings for Distributed Polarization Rotators

October 20, 2016

Author(s)

Katelynn A. Sharma, Thomas Germer, Christopher Smith, Jonathan Zuegel, James B. Oliver, Thomas G. Brown

… Preliminary integrated scatter results from magnesium oxide birefringent thin films indicate dipped sol-gel …

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