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A field-effect transistor-based room-temperature quantum current source
Published
Author(s)
Kin (Charles) Cheung, Barry J O'Sullivan
Abstract
The work provides a proof-of-concept demonstration of the room-temperature quantum current source based on nanoscale metal-oxide-semiconductor-Field-Effect-Transistor (MOSFET). Using low leakage MOSFET, the current pump achieved 1.00011 ± 0.00022 charges per cycle without any leakage correction scheme. The accuracy is limited by noise in the very low current measurement, and by calibration uncertainty.
Cheung, K.
and O'Sullivan, B.
(2023),
A field-effect transistor-based room-temperature quantum current source, Applied Physics Letters, [online], https://doi.org/10.1063/5.0146398, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936002
(Accessed October 8, 2025)