A field-effect transistor-based room-temperature quantum current source
Kin (Charles) Cheung, Barry J O'Sullivan
The work provides a proof-of-concept demonstration of the room-temperature quantum current source based on nanoscale metal-oxide-semiconductor-Field-Effect-Transistor (MOSFET). Using low leakage MOSFET, the current pump achieved 1.00011 ± 0.00022 charges per cycle without any leakage correction scheme. The accuracy is limited by noise in the very low current measurement, and by calibration uncertainty.
and O'Sullivan, B.
A field-effect transistor-based room-temperature quantum current source, Applied Physics Letters, [online], https://doi.org/10.1063/5.0146398, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936002
(Accessed October 4, 2023)