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A field-effect transistor-based room-temperature quantum current source

Published

Author(s)

Kin (Charles) Cheung, Barry J O'Sullivan

Abstract

The work provides a proof-of-concept demonstration of the room-temperature quantum current source based on nanoscale metal-oxide-semiconductor-Field-Effect-Transistor (MOSFET). Using low leakage MOSFET, the current pump achieved 1.00011 ± 0.00022 charges per cycle without any leakage correction scheme. The accuracy is limited by noise in the very low current measurement, and by calibration uncertainty.
Citation
Applied Physics Letters
Volume
122
Issue
18

Keywords

quantum current, MOSFET, room temperature, charge-pumping

Citation

Cheung, K. and O'Sullivan, B. (2023), A field-effect transistor-based room-temperature quantum current source, Applied Physics Letters, [online], https://doi.org/10.1063/5.0146398, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936002 (Accessed April 12, 2024)
Created May 4, 2023, Updated August 3, 2023