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Polarization Characteristics of Silicon Photodiodes and Its Dependence on Oxide Thickness in the Far UV Region

Published

Author(s)

T Saito, L R. Hughey, James E. Proctor, Thomas R. O'Brian
Citation
http://www.aps.anl.gov/xfd/WWW/xfd/communicator/announce1095/abstracts/a10.pdf

Citation

Saito, T. , Hughey, L. , Proctor, J. and O'Brian, T. (1996), Polarization Characteristics of Silicon Photodiodes and Its Dependence on Oxide Thickness in the Far UV Region, http://www.aps.anl.gov/xfd/WWW/xfd/communicator/announce1095/abstracts/a10.pdf, [online], http://www.aps.anl.gov/xfd/WWW/xfd/communicator/announce1095/abstracts/a10.pdf (Accessed June 24, 2024)

Issues

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Created December 31, 1995, Updated October 12, 2021