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Displaying 1 - 25 of 666

Synthesis, crystal structure, and physical properties of BaSnS2

February 11, 2022
Wilarachchige Gunatilleke, Andrew May, Angela R. Hight Walker, Adam Biacchi, George Nolas
Phase-pure BaSnS2, with space group Pn21/c, was synthesized and the structural and physical properties were investigated. The thermal properties and optical measurements are reported for the first time. The Debye temperature and Sommerfeld coefficient were

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022
Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul
Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET)

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

Dynamics studies of polarization switching in ferroelectric hafnium zirconium oxide

May 12, 2021
X. Lyu, M. Si, Pragya Shrestha, Kin (Charles) Cheung, P. D. Ye
In this paper, we review the ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with crossbar metal-insulator-metal (MIM) structures including materials development, device fabrication, structure

Optoelectronic Intelligence

May 7, 2021
Jeff Shainline
To design and construct hardware for general intelligence, we must consider principles of both neuroscience and very-large-scale integration. For large neural systems capable of general intelligence, the attributes of photonics for communication and

Developing Single Layer MOS Quantum Dots for Diagnostic Qubits

December 28, 2020
Yanxue Hong, Aruna Ramanayaka, Ryan Stein, Joshua M. Pomeroy
The design, fabrication and characterization of single metal gate layer, metal-oxide- semiconductor (MOS) quantum dot devices robust against dielectric breakdown are presented as prototypes for future diagnostic qubits. These devices were developed as a

Methods for Characterization of Bioactivity Using Confocal Microscopy

December 1, 2020
Jirun Sun, Nancy Lin, Joy Dunkers, Sheng Lin-Gibson
One common tissue engineering approach for regenerating or replacing damaged tissues involves a porous polymeric scaffold. The scaffolds serve as the mechanical framework for cell attachment and growth, and generate an environment with features that span

Existence conditions for phononic frequency combs

November 5, 2020
Zhen Qi, Curtis R. Menyuk, Jason Gorman, Adarsh V. Ganesan
Recently, the mechanical analog of optical frequency combs, phononic frequency combs, have been demonstrated in mechanical resonators and have gained interest since their comb frequencies can be in the range of kilohertz to gigahertz. The physical origin

Storing and retrieving wavefronts with resistive temporal memory

October 10, 2020
Advait Madhavan, Mark D. Stiles
We extend the reach of temporal computing schemes by developing a memory for multi-channel temporal patterns or "wavefronts." This temporal memory re-purposes conventional one-transistor-one-resistor (1T1R) memristor crossbars for use in an arrival-time

High-Resolution Biochemical Activity Measurements with Commercial Transistors

September 1, 2020
Seulki Cho, Son T. Le, Curt A. Richter, Arvind Balijepalli
We demonstrate that single-gated, commercially-sourced, field-effect transistors (FETs) operated with a lock- in amplifier (LIA) under closed-loop control can achieve an average pH resolution of 9x10^-4. This performance represents an 8-fold improvement

High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs)

August 14, 2020
Robin P. Hansen, Amit K. Agrawal, Michael Shur, Jerry Tersoff, Babak Nikoobakht, Yuqin Zong
"Efficiency droop," i.e., a decline in brightness of light-emitting diodes (LEDs) at high electrical currents, limits the performance of all commercial LEDs and has limited the output power of submicrometer LEDs and lasers to nanowatts. We present a fin p

Elucidating Charge Transport Mechanisms in Graphene Inks

August 7, 2020
Ana C. de Moraes1, Jan Obrzut, Vinod K. Sangwan, Julia R. Downing, Lindsay E. Chaney, Dinesh K. Patel, Randolph Elmquist, Mark C. Hersam
Solution-processed graphene inks using ethyl cellulose polymer as a binder/stabilizer were blade-coated into large area films. Systematic charge transport characterization showed graphene patterns with high mobility ( 160 cm2 V-1 s-1), low energy gap

The effect of strain on tunnel barrier height in silicon quantum devices

July 13, 2020
Ryan Stein, Michael Stewart
Semiconductor quantum dot (QD) devices experience a modulation of the band structure at the edge of lithographically defined gates due to mechanical strain. This modulation can play a prominent role in the device behavior at low temperatures, where QD

Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

July 2, 2020
Pragya R. Shrestha, xiao Lyu, Mengwei Si, Jason P. Campbell, Kin P. Cheung, Peide Ye
The polarization switching speed of ferroelectric (FE) hafnium zirconium oxide (HZO) is studied with the device size down to sub-μm in lateral dimension. Ultrafast measurement of transient switching current on metal-ferroelectric-metal (MFM) device with a

Anomalous accelerated negative-bias- instability (NBI) at low drain bias

June 30, 2020
Kin P. Cheung
We observed at very low drain bias an anomalous acceleration of Negative-bias-instability at room temperature, as if the channel temperature has been raised significantly. The channel width and channel length dependent of this acceleration suggest that in

Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions

June 30, 2020
Dmitry Veksler, gennadi bersuker, A W. Bushmaker, Maribeth Mason, Pragya Shrestha, Kin P. Cheung, Jason Campbell, T Rueckes, L Clevlend, H Luan, D C. Gilmer
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs
Displaying 1 - 25 of 666