Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 1 - 25 of 676

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping

August 26, 2022
Author(s)
Siyuan Zhang, Hsun-Jen Chuang, SON LE, Curt A. Richter, Kathleen McCreary, Berend Jonker, Angela R. Hight Walker, Christina Hacker
The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next generation electronic and optoelectronic devices. Understanding the nature of the contacts is a critical step for realizing efficient charge

How to Report and Benchmark Emerging Field-Effect Transistors

July 29, 2022
Author(s)
Zhihui Cheng, Chin-Sheng Pan, Peiqi Wang, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven Koester, Eric Pop, Aaron Franklin, Curt A. Richter
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide

July 22, 2022
Author(s)
Xiao Lyu, Pragya Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin (Charles) Cheung, Yu Shimeng, Peide Ye
In this work, we present the first experimental determination of nucleation time and domain wall (DW) velocity by studying switching dynamics of ferroelectric (FE) hafnium zirconium oxide (HZO). Experimental data and simulation results were used to

Multi-bit per-cell 1T SiGe Floating Body RAM for Cache Memory in Cryogenic Computing

July 22, 2022
Author(s)
Pragya Shrestha, Jason Campbell, Wriddhi Chakraborty, A Gupta, R Saligram, S Spetalnick, A Raychowdhury, Suman Datta
Cryogenic computing requires high-density on-die cache memory with low latency, high bandwidth and energy-efficient access to increase cache hit and maximize processor performance. Here, we experimentally demonstrate, high-speed multi-bit memory operation

Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector

June 30, 2022
Author(s)
Chandraman Patil, Chaobo Dong, Hao Wang, Hamed Dalir, Sergiy Krylyuk, Huairuo Zhang, Albert Davydov, Volker Sorger
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light

High-performance dual-gate graphene pH sensors

June 28, 2022
Author(s)
Son Le, Seulki Cho, Alexander Zaslavsky, Curt A. Richter, Arvind Balijepalli
High precision biophysical measurements that are portable and performed without prior labeling of the molecules can greatly benefit several areas of biotechnology and biophysics, but existing techniques often lack sufficient resolution. Field-effect

Synthesis, crystal structure, and physical properties of BaSnS2

February 11, 2022
Author(s)
Wilarachchige Gunatilleke, Andrew May, Angela R. Hight Walker, Adam Biacchi, George Nolas
Phase-pure BaSnS2, with space group Pn21/c, was synthesized and the structural and physical properties were investigated. The thermal properties and optical measurements are reported for the first time. The Debye temperature and Sommerfeld coefficient were

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022
Author(s)
Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul
Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET)

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

Dynamics studies of polarization switching in ferroelectric hafnium zirconium oxide

May 12, 2021
Author(s)
X. Lyu, M. Si, Pragya Shrestha, Kin (Charles) Cheung, P. D. Ye
In this paper, we review the ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with crossbar metal-insulator-metal (MIM) structures including materials development, device fabrication, structure

Optoelectronic Intelligence

May 7, 2021
Author(s)
Jeff Shainline
To design and construct hardware for general intelligence, we must consider principles of both neuroscience and very-large-scale integration. For large neural systems capable of general intelligence, the attributes of photonics for communication and

Developing Single Layer MOS Quantum Dots for Diagnostic Qubits

December 28, 2020
Author(s)
Yanxue Hong, Aruna Ramanayaka, Ryan Stein, Joshua M. Pomeroy
The design, fabrication and characterization of single metal gate layer, metal-oxide- semiconductor (MOS) quantum dot devices robust against dielectric breakdown are presented as prototypes for future diagnostic qubits. These devices were developed as a

Methods for Characterization of Bioactivity Using Confocal Microscopy

December 1, 2020
Author(s)
Jirun Sun, Nancy Lin, Joy Dunkers, Sheng Lin-Gibson
One common tissue engineering approach for regenerating or replacing damaged tissues involves a porous polymeric scaffold. The scaffolds serve as the mechanical framework for cell attachment and growth, and generate an environment with features that span

Existence conditions for phononic frequency combs

November 5, 2020
Author(s)
Zhen Qi, Curtis R. Menyuk, Jason Gorman, Adarsh V. Ganesan
Recently, the mechanical analog of optical frequency combs, phononic frequency combs, have been demonstrated in mechanical resonators and have gained interest since their comb frequencies can be in the range of kilohertz to gigahertz. The physical origin

Storing and retrieving wavefronts with resistive temporal memory

October 10, 2020
Author(s)
Advait Madhavan, Mark D. Stiles
We extend the reach of temporal computing schemes by developing a memory for multi-channel temporal patterns or "wavefronts." This temporal memory re-purposes conventional one-transistor-one-resistor (1T1R) memristor crossbars for use in an arrival-time
Displaying 1 - 25 of 676