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Spectroscopic Analysis of Polymer and Monolayer MoS2 Interfaces for Photodetection Applications

Published

Author(s)

Christine McGinn, Daniel Harrington, Edwin J. Heilweil, Christina Hacker

Abstract

Polymer passivation has been leveraged to improve photodetection in two dimensional transition metal dichalcogenide field-effect transistors (2D TMD FETs). The relative passivation effects of common polymers, however, is not well understood. In this work, the interface of monolayer MoS2 and three common polymers, Parylene N (Pa-N), polymethyl methacrylate (PMMA), and polyvinylidene difluoride trifluoroethylene (PVDF-TrFE), is assessed with multiple spectroscopic methods. Raman and photoluminescence spectroscopy demonstrate that Pa-N and PMMA provide an n doping effect, which increases photoconductivity and photogenerated charge in Terahertz domain and time-resolved spectroscopy. Terahertz time-resolved spectroscopy shows significantly longer lifetime for only PVDF-TrFE. These results suggest that PVDF-TrFE provides a unique benefit for photodetection applications.
Citation
Applied Physics Letters
Volume
124
Issue
1

Citation

McGinn, C. , Harrington, D. , Heilweil, E. and Hacker, C. (2024), Spectroscopic Analysis of Polymer and Monolayer MoS2 Interfaces for Photodetection Applications, Applied Physics Letters, [online], https://doi.org/10.1063/5.0179156, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956828 (Accessed March 1, 2024)
Created January 3, 2024, Updated January 17, 2024