Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

V-Ramp test and gate oxide screening under the "lucky" defect model



Kin (Charles) Cheung


The persistent (after exhaustive wafer cleaning) extrinsic breakdown distribution of thick gate oxides requires early breakdown mechanisms beyond the popular local thinning model to explain. The success of the 'Lucky" defect model in fulfilling this role deserves a further exploration of its implications. This work examines how the V-Ramp method of oxide quality monitor and the high-voltage screening method to weed out weak devices will be impacted. The conclusion is that the V-Ramp method fails to produce useful information about the oxide quality at operation voltage and that the high-field screening method fails to screen out weak parts.
Conference Dates
March 26-30, 2023
Conference Location
Monterey, CA, US
Conference Title
2023 IEEE International Reliability Physics Symposium


oxide breakdown, extrinsic, V-Ramp, screening


Cheung, K. (2023), V-Ramp test and gate oxide screening under the "lucky" defect model, 2023 IEEE International Reliability Physics Symposium, Monterey, CA, US, [online],, (Accessed May 21, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created May 15, 2023, Updated June 14, 2023