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V-Ramp test and gate oxide screening under the "lucky" defect model

Published

Author(s)

Kin (Charles) Cheung

Abstract

The persistent (after exhaustive wafer cleaning) extrinsic breakdown distribution of thick gate oxides requires early breakdown mechanisms beyond the popular local thinning model to explain. The success of the 'Lucky" defect model in fulfilling this role deserves a further exploration of its implications. This work examines how the V-Ramp method of oxide quality monitor and the high-voltage screening method to weed out weak devices will be impacted. The conclusion is that the V-Ramp method fails to produce useful information about the oxide quality at operation voltage and that the high-field screening method fails to screen out weak parts.
Conference Dates
March 26-30, 2023
Conference Location
Monterey, CA, US
Conference Title
2023 IEEE International Reliability Physics Symposium

Keywords

oxide breakdown, extrinsic, V-Ramp, screening

Citation

Cheung, K. (2023), V-Ramp test and gate oxide screening under the "lucky" defect model, 2023 IEEE International Reliability Physics Symposium, Monterey, CA, US, [online], https://doi.org/10.1109/IRPS48203.2023.10118184, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=935744 (Accessed May 21, 2024)

Issues

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Created May 15, 2023, Updated June 14, 2023