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A Fully Integrated, Automatically Generated DC–DC Converter Maintaining >75% Efficiency From 398 K Down to 23 K Across Wide Load Ranges in 12-nm FinFET

Published

Author(s)

Anhang Li, Jeongsup Lee, Prashansa Mukim, Brian Hoskins, Pragya Shrestha, David Wentzloff, David Blaauw, Dennis Sylvester, Mehdi Saligane

Abstract

This paper presents a fully integrated recursive successive-approximation switched capacitor (RSC) DC-DC converter implemented using an automatic cell-based layout generation in 12 nm FinFET technology. A novel design methodology is demonstrated based on the theoretical analyses of the optimal energy operation of the switched-capacitor (SC) DC-DC converter and directly finds the optimal design parameters from the given input specifications. The converter maintains > 75% efficiency across a vast range of output currents and temperatures. Our design targets voltage scaling for applications such as cryo-computing, cryo-sensing, and parts of quantum computing to achieve high system power efficiency.
Citation
IEEE Solid-State Circuits Letters
Volume
7

Keywords

Cryogenic, Switched-Capacitor, DC-DC, wide-temperature

Citation

Li, A. , Lee, J. , Mukim, P. , Hoskins, B. , Shrestha, P. , Wentzloff, D. , Blaauw, D. , Sylvester, D. and Saligane, M. (2024), A Fully Integrated, Automatically Generated DC–DC Converter Maintaining >75% Efficiency From 398 K Down to 23 K Across Wide Load Ranges in 12-nm FinFET, IEEE Solid-State Circuits Letters, [online], https://doi.org/10.1109/LSSC.2023.3349129, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956846 (Accessed March 3, 2024)
Created January 1, 2024, Updated January 24, 2024