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Displaying 601 - 625 of 757

Characterization of Coplanar Waveguide on Epitaxial Layers

August 14, 1997
Author(s)
Dylan F. Williams, J. M. Belquin, Alain Spisser, Alain Cappy, G. Dambrine
We examine the effect of thin AlInAs/GaInAs epitaxial layers on the propagation of electrical signals in coplanar waveguide transmission lines fabricated on semi-insulating indium phosphide substrates. We show that argon isolation implants effectively

Noise-Temperature Measurement System for the WR-28 Band

August 1, 1997
Author(s)
James P. Randa, L. A. Terrell
The NIST Noise Project has constructed and tested a radiometer for the measurement of noise sources in the WR-28 waveguide band (26.5 GHz to 40 GHz). It is a total-power radiometer which incorporates a six-port reflectometer for the measurement of relevant

Embedded multiconductor transmission line characterization

June 8, 1997
Author(s)
Dylan F. Williams
This paper presents a measurement method that characterizes lossy printed multiconductor transmission lies embedded in transitions, connectors, or packages with significant electrical parasitics. We test the method on a pair of lossy coupled asymmetric

Electrothermal Simulation of an IGBT PWM Inverter

May 1, 1997
Author(s)
Alan Mantooth, Allen R. Hefner Jr.
A recently developed electrothermal network simulation methodoogy is used to analyze the behavior of a full-bridge, pulse-width modulated (PWM), voltage-source inverter, which uses insulated gate bipolar transistors (IGBT's) as the switching devices. The

Multiconductor Transmission Line Characterization

May 1, 1997
Author(s)
Dylan F. Williams
This paper presents a measurement method that completely characterizes lossy printed multiconductor transmission lines. It determines not only the matrices of impedances and admittances per unit length describing the transmission line in the conductor

IGBT Half-Bridge Shoot-Through Characterization for Model Validation

December 31, 1996
Author(s)
David W. Berning, Allen R. Hefner Jr.
A circuit is described for making a variety of measurements on half-bridge Insulated Gate Bipolar Transistor (IGBT) pairs for validating IGBT models. The circuit incorporates two robust isolated gate drives for the IGBTs. Each IGBT is driven with an eight

Electron Interactions With C 3 F 8

September 1, 1996
Author(s)
Loucas G. Christophorou, James K. Olthoff, MVVS. Rao
To aid the many and diverse applications for which perfluoropropane (C 3F 8) is suited, we critically evaluate and synthesize existing knowledge on electron scattering and electron energy-loss processes for the C 3F 8 molecule, and provide recommendations
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