Electron Drift Velocities and Electron Attachment Coefficients in Pure CHF3, and its Mixtures with Argon

Published

December 1, 1998

Author(s)

Yicheng Wang, Loucas G. Christophorou, James K. Olthoff, J. K. Verbrugge

Abstract

Measurements are reported of (i) the electron drift velocity in pure trifluoromethane (CHF₃) gas and in its mixtures with argon, and (ii) electron attachment in pure CHF₃. The E/N dependence on the electron drift velocity in mixtures exhibits regions of distinct negative differential conductivity. The values of the electron attachment coefficients in pure CHF₃ are small and decrease with E/N. The measurements were made at room temperature and over the E/N range from 0.05 X 10^-17 V cm^-2 to 60 x 10^-17 V cm² (0.05 Td to 60 Td, 1 Td = 10^-17 V cm²). The electron attachment rate constant is virtually independent of E/N below about 50 x 10^-17 V cm² and equal to difference} 13 x 10^-14 cm³ S^-1. This small attachment rate constant may be due to impurities.

Proceedings Title

Proc., Intl. Symp. on Gaseous Dielectrics

Conference Dates

June 2-5, 1998

Conference Location

Virginia Beach, VA

Pub Type

Conferences

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Keywords

CHF₃, drift velocity, electron attachment

Citation

Wang, Y. , Christophorou, L. , Olthoff, J. and Verbrugge, J. (1998), Electron Drift Velocities and Electron Attachment Coefficients in Pure CHF₃, and its Mixtures with Argon, Proc., Intl. Symp. on Gaseous Dielectrics, Virginia Beach, VA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=3598 (Accessed October 10, 2025)