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Electron Drift Velocities and Electron Attachment Coefficients in Pure CHF3, and its Mixtures with Argon

Published

Author(s)

Yicheng Wang, Loucas G. Christophorou, James K. Olthoff, J. K. Verbrugge

Abstract

Measurements are reported of (i) the electron drift velocity in pure trifluoromethane (CHF3) gas and in its mixtures with argon, and (ii) electron attachment in pure CHF3. The E/N dependence on the electron drift velocity in mixtures exhibits regions of distinct negative differential conductivity. The values of the electron attachment coefficients in pure CHF3 are small and decrease with E/N. The measurements were made at room temperature and over the E/N range from 0.05 X 10-17 V cm-2 to 60 x 10-17 V cm2 (0.05 Td to 60 Td, 1 Td = 10-17 V cm2). The electron attachment rate constant is virtually independent of E/N below about 50 x 10-17 V cm2 and equal to difference} 13 x 10-14 cm3 S-1. This small attachment rate constant may be due to impurities.
Proceedings Title
Proc., Intl. Symp. on Gaseous Dielectrics
Conference Dates
June 2-5, 1998
Conference Location
Virginia Beach, VA

Keywords

CHF<sub>3</sub>, drift velocity, electron attachment

Citation

Wang, Y. , Christophorou, L. , Olthoff, J. and Verbrugge, J. (1998), Electron Drift Velocities and Electron Attachment Coefficients in Pure CHF<sub>3</sub>, and its Mixtures with Argon, Proc., Intl. Symp. on Gaseous Dielectrics, Virginia Beach, VA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=3598 (Accessed February 26, 2024)
Created November 30, 1998, Updated October 12, 2021