Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Applications of Electron-Interaction Reference Data to the Semiconductor Industry



Loucas G. Christophorou, James K. Olthoff


Many advanced plasma diagnostic techniques and plasma models require fundamental physical data in order to make accurate measurements or predictions. Fundamental electron-interaction data are among the most critical since electron collisions are the primary source of ions, reactive radicals, and excited species present in etching, cleaning, and decomposition plasmas. In this paper we present (i) a description of some semiconductor applications that require fundamental electron-interaction data, (ii) an explanation of the NIST program to provide these data, (iii) a summary of the available fundamental electron-interaction data for plasma processing gases, and (iv) a discussion of general data needs.
Proceedings Title
Characterization and Metrology for ULSI Technology
Conference Dates
March 23-27, 1998
Conference Location
Gaithersburg, MD


carbon tetrafluoride, cross section, electron interaction, electron transport, perfluoroethane, perfluoropropane, plasma processing


Christophorou, L. and Olthoff, J. (1998), Applications of Electron-Interaction Reference Data to the Semiconductor Industry, Characterization and Metrology for ULSI Technology, Gaithersburg, MD, [online], (Accessed May 20, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created November 30, 1998, Updated October 12, 2021