Applications of Electron-Interaction Reference Data to the Semiconductor Industry

Published

December 1, 1998

Author(s)

Loucas G. Christophorou, James K. Olthoff

Abstract

Many advanced plasma diagnostic techniques and plasma models require fundamental physical data in order to make accurate measurements or predictions. Fundamental electron-interaction data are among the most critical since electron collisions are the primary source of ions, reactive radicals, and excited species present in etching, cleaning, and decomposition plasmas. In this paper we present (i) a description of some semiconductor applications that require fundamental electron-interaction data, (ii) an explanation of the NIST program to provide these data, (iii) a summary of the available fundamental electron-interaction data for plasma processing gases, and (iv) a discussion of general data needs.

Proceedings Title

Characterization and Metrology for ULSI Technology

Conference Dates

March 23-27, 1998

Conference Location

Gaithersburg, MD

Pub Type

Conferences

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Keywords

carbon tetrafluoride, cross section, electron interaction, electron transport, perfluoroethane, perfluoropropane, plasma processing

Citation

Christophorou, L. and Olthoff, J. (1998), Applications of Electron-Interaction Reference Data to the Semiconductor Industry, Characterization and Metrology for ULSI Technology, Gaithersburg, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=6001 (Accessed December 7, 2024)