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Characterization of On-Wafer Diode Noise Sources

Published

Author(s)

James P. Randa, Dave K. Walker, Lawrence P. Dunleavy, Robert L. Billinger, John Rice

Abstract

A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology (NIST). This paper reviews the methods for accurate on-wafer measurements of noise temperature and details the preliminary design and construction of the transfer standards. Measurements are presented of their noise temperatures at frequencies from 8 to 12 GHz. Such transfer standards could be used in interlaboratory comparisons or as a verification tool for checking on-wafer noise calibration.
Proceedings Title
Tech Dig., Auto. RF Tech. Group Conf.
Conference Dates
June 7-12, 1998
Conference Location
Baltimore, MD

Keywords

noise, noise measurement, noise source, on-wafer measurement, noise characterization, noise temperature

Citation

Randa, J. , Walker, D. , Dunleavy, L. , Billinger, R. and Rice, J. (1998), Characterization of On-Wafer Diode Noise Sources, Tech Dig., Auto. RF Tech. Group Conf., Baltimore, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=27897 (Accessed February 26, 2024)
Created June 1, 1998, Updated February 19, 2017