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Manufacturing

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Displaying 2101 - 2125 of 2179

Accuracy in Integrated Circuit Dimensional Measurements

December 1, 1994
Author(s)
James E. Potzick
The measurement of critical dimensions of features on integrated circuits and photomasks is modeled as the comparison of the images of the test object and of a standard object in a measuring device. A length measuring instrument is then a comparator. The

Parameters Characterizing a Critical Dimension Measurement

December 1, 1994
Author(s)
Robert D. Larrabee, Michael T. Postek
There are a number of parameters used to characterize a measurement result for the purposes of specifying its value for the intended purpose. Precision (variability) and accuracy (correctness) are two of the more often used parameters and, like many other

Dynamics and Structure of Self-Assembled Organic Molecules at the Solid-Liquid Interface

October 1, 1994
Author(s)
J Jorgensen, N Shcmeisser, J Garnaes, L Madsen, K Schaumburg, Larry Hansen
We have analysed scanning tunnelling microscopc (STM) images of self-assembled didodecylbenzene (DDB) molecules physisorbed on graphite from a DDB solution using octylbenzene as solvent. The DDB images were obtained alternating with images of the graphite

Design of an Atomic Force Microscope with Interferometric Position Control

August 19, 1994
Author(s)
J Schneir, T Mcwaid, J Alexander, B Wilfley
Advances in the manufacture of integrated circuits, x?ray optics, magnetic read-write heads, optical data storage media, and razor blades require advances in ultraprecision metrology. Each of these industries is currently investigating the use of atomic

Dimensional Inspection Planning Based on Product Data Standards

July 1, 1994
Author(s)
Shaw C. Feng
This paper describes an activity model for dimensional inspection planning that bridges the gap between product design and the dimensional measurement of manufactured products. Functionally, this model specifies requirements for developing a part of a

Radiation Scattered by Two Touching Spheres

June 20, 1994
Author(s)
Egon Marx
During the manufacture of powder metal, the size distribution of the metal spheres can be determined to some extent by the distribution of light scattered by the spheres while they are streaming by a laser beam. Micrographs show the presence of chains of

A Users' Guide to NIST SRM 2084: CMM Probe Performance Standards

June 1, 1994
Author(s)
Gregory W. Caskey, Steven D. Phillips, Bruce R. Borchardt, David E. Ward, Daniel S. Sawyer
Standard Reference Materials (SRMs) as defined by the National Institute of Standards and Technology (NIST) are well-characterized materials, produced in quantity and certified for one or more physical or chemical properties. They are used to assure the

A Monte Carlo Model for SEM Linewidth Metrology

May 1, 1994
Author(s)
J R. Lowney, Michael T. Postek, Andras Vladar
A scanning electron microscope (SEM) can be used to measure the dimensions of the microlithographic features of integrated circuits. However, without a good model of the electron-beam / specimen interaction, accurate edge location cannot be obtained. A

An Instrument for Calibrating Atomic Force Microscope Standards

May 1, 1994
Author(s)
J Schneir, T Mcwaid, Theodore V. Vorburger
To facilitate the use of AFMs for manufacturing we have initiated a project to develop and calibrate artifacts which can in turn be used to calibrate a commercial AFM so that subsequent AFM measurement are accurate and traceable back to the wavelength of

Electrical Test Structure for Overlay Metrology Referenced to Absolute Length Standards

May 1, 1994
Author(s)
Michael W. Cresswell, William B. Penzes, Robert Allen, L Linholm, C Ellenwood, E C. Teague
This test structure is based on the voltage-dividing potentiometer principle and was originally replicated in a single lithography cycle to evaluate feature placement by a primary pattern generator. A new test structure has now been developed from the

Photoreflectance Study of the Chemically Modified (100) GaAs Surface

May 1, 1994
Author(s)
John A. Dagata, O Glembocki, J Tuchman, K Ko, S Pang
Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs, the Fermi level pins

The Measurement of the Pile-up Topography of Hardness Indentations

April 1, 1994
Author(s)
L Blunt, P Sullivan
A number of indentations were made in 70:30 brass specimens. The resulting surface disturbance was analyzed using a stylus-based 3D topography measuring instrument. Numerical methods based on progressive truncation routines were developed in order to

Dimensional Inspection Planning Based on Product Data Standards

March 19, 1994
Author(s)
Shaw C. Feng
An international standard on product data representation and exchange for dimensional inspection planning is being developed. This paper provides a review of fundamental technology enabling the standard development and describes the current status of an

The Measurement and Uncertainty of a Calibration Standard for the SEM

March 1, 1994
Author(s)
Joseph Fu, M Croarkin, Theodore V. Vorburger
Standard Reference Material 484 is an artifact for calibration the magnification scale of a Scanning Electron Microscope (SEM) within the range of 1000X to 20000X. Seven issues, SRM-484, and SRM-484a to SRM-484f, have been certified between 1977 and 1992

The Effects of Quantization on 3D Topography Characterization

February 1, 1994
Author(s)
E Mainsah, P Sullivan, K Stout
This paper investigates the influence of quantization on 3D surface characterization by carrying out an analysis of surface parameter changes on a range of real and simulated surfaces. The changes in parameters are calculated as a percentage of the

A Calibrated Atomic Force Microscope

January 1, 1994
Author(s)
T Mcwaid, J Schneir
Atomic force microscope (AFM) is a rapidly emerging measurement technology. As the technology develops, it is being incorporated into industrial research and development, and manufacturing facilities. At present there are no sub-micrometer pitch or sub-ten
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