Measurement of Patterned Film Linewidth for Interconnect Characterization
L Linholm, Robert Allen, Michael W. Cresswell, Rathindra Ghoshtagore, S Mayo, H Schafft, John A. Kramar
The results from high-quality electrical and physical measurements on the same cross-bridge resistor test structure with approximately vertical sidewalls have shown differences in linewidth as great as 90 nm for selected conductive films. These differences were independent of design linewidth. As dimensions become smaller, the accurate measurement of the patterned conductor width is necessary to assure predictable timing performance of the interconnect system as well as control of critical device parameters.
Proceedings of IEEE International Conference on Microelectronic Test Structures
, Allen, R.
, Cresswell, M.
, Ghoshtagore, R.
, Mayo, S.
, Schafft, H.
and Kramar, J.
Measurement of Patterned Film Linewidth for Interconnect Characterization, Proceedings of IEEE International Conference on Microelectronic Test Structures, Nara, 1, JA
(Accessed December 11, 2023)