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Measurement of Patterned Film Linewidth for Interconnect Characterization

Published

Author(s)

L Linholm, Robert Allen, Michael W. Cresswell, Rathindra Ghoshtagore, S Mayo, H Schafft, John A. Kramar

Abstract

The results from high-quality electrical and physical measurements on the same cross-bridge resistor test structure with approximately vertical sidewalls have shown differences in linewidth as great as 90 nm for selected conductive films. These differences were independent of design linewidth. As dimensions become smaller, the accurate measurement of the patterned conductor width is necessary to assure predictable timing performance of the interconnect system as well as control of critical device parameters.
Proceedings Title
Proceedings of IEEE International Conference on Microelectronic Test Structures
Conference Dates
March 22-25, 1995
Conference Location
Nara, 1, JA

Citation

Linholm, L. , Allen, R. , Cresswell, M. , Ghoshtagore, R. , Mayo, S. , Schafft, H. and Kramar, J. (1995), Measurement of Patterned Film Linewidth for Interconnect Characterization, Proceedings of IEEE International Conference on Microelectronic Test Structures, Nara, 1, JA (Accessed May 17, 2024)

Issues

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Created December 31, 1994, Updated October 12, 2021