Silver, R.
, Dagata, J.
and Tseng, H.
(1994),
Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide, Journal of Applied Physics
(Accessed April 2, 2025)
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Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide
Published
Author(s)
, , H. W. Tseng
Abstract
Tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type GaAs (110) surfaces is reported for air and ultrahigh-vacuum conditions. Simulations of the complete I-V characteristics with explicit inclusion of surface states within the planar junction theory are described and compared to experiment. These results provide a comprehensive understanding of the interplay between tip-induced and surface-state-induced band-bending effects observed in the tunneling spectra of passivated semiconductor surfaces.Citation
Journal of Applied Physics
Volume
76
Pub Type
Journals
Citation
Issues
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Created October 31, 1994, Updated October 12, 2021