Silver, R.
, Dagata, J.
and Tseng, H.
(1994),
Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide, Journal of Applied Physics
(Accessed December 12, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide
Published
Author(s)
, , H. W. Tseng
Abstract
Tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type GaAs (110) surfaces is reported for air and ultrahigh-vacuum conditions. Simulations of the complete I-V characteristics with explicit inclusion of surface states within the planar junction theory are described and compared to experiment. These results provide a comprehensive understanding of the interplay between tip-induced and surface-state-induced band-bending effects observed in the tunneling spectra of passivated semiconductor surfaces.Citation
Journal of Applied Physics
Volume
76
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 31, 1994, Updated October 12, 2021