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Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide

Published

Author(s)

Richard M. Silver, John A. Dagata, H. W. Tseng

Abstract

Tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type GaAs (110) surfaces is reported for air and ultrahigh-vacuum conditions. Simulations of the complete I-V characteristics with explicit inclusion of surface states within the planar junction theory are described and compared to experiment. These results provide a comprehensive understanding of the interplay between tip-induced and surface-state-induced band-bending effects observed in the tunneling spectra of passivated semiconductor surfaces.
Citation
Journal of Applied Physics
Volume
76

Citation

Silver, R. , Dagata, J. and Tseng, H. (1994), Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide, Journal of Applied Physics (Accessed June 19, 2024)

Issues

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Created October 31, 1994, Updated October 12, 2021