Dagata, J.
(1995),
SPM-Based Lithography for Electronics Device Fabrication: New Strategies and Directions, Proceedings of Materials Research Society Symposium
(Accessed May 9, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
SPM-Based Lithography for Electronics Device Fabrication: New Strategies and Directions
Published
Author(s)
Abstract
Direct patterning of a semiconductor surface to produce an ultrathin oxide mask has proven to be a promising approach for integrating lithographic methods based on scanned probe microscopy (SPM) into existing electronics device processing. The resulting masks are capable of withstanding the necessary etching and thermal cycling required for pattern development. Recent work has validated the concept for the fabrication of silicon devices. The current challenges which face this active research area will now require a detailed, predictive understanding of the mechanism responsible for oxidation within an SPM junction in order for the process to be optimized with respect to write speed, resolution, and reliability.Proceedings Title
Proceedings of Materials Research Society Symposium
Pub Type
Conferences
Keywords
fabrication of silicon devices, scanned probe microscopy, semiconductor surface, ultrathin oxide
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 1, 1995, Updated February 19, 2017