U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Manufacturing

Search Publications

Search Title, Abstract, Conference, Citation, Keyword or Author
  • Published Date
Displaying 1676 - 1700 of 2179

The Challenges of Nanometrology

January 1, 2002
Author(s)
Michael T. Postek
The promise and challenge of nanotechnology is immense. The National Nanotechnology Initiative provides an opportunity to develop a new technological base for U.S. Industry. Nanometrology is the basis of the new measurement methods that must be developed

Toward Traceability for At Line AFM Dimensional Metrology

January 1, 2002
Author(s)
Ronald G. Dixson, Angela Guerry, Marylyn H. Bennett, Theodore V. Vorburger, Michael T. Postek
The in-line and at-line measurement tools for critical dimension (CD) metrology in semiconductor manufacturing are technologically advanced instruments that exhibit excellent measurement repeatability--below 1 nm in some cases. Accuracy, however, is

Video-Based Metrology

January 1, 2002
Author(s)
Theodore D. Doiron, Marilyn N. Abrams, Tsai Hong Hong, Michael O. Shneier
With the rapid growth of video-based measurement and inspection systems, we would like to determine the extent to which industry needs calibration artifacts and standardized methods for video metrology. We hope to open a dialog among users for discussing

Video-Based Metrology

January 1, 2002
Author(s)
Theodore D. Doiron, John R. Stoup, Marilyn N. Abrams, Tsai Hong Hong
Video cameras are increasingly used to make dimensional measurements. Many of these systems use interpolation of the pixel data, with some systems claiming to find edges with precision of l/100 of a pixel. We have studied the response of single pixels of a

Critical Dimension Metrology and the Scanning Electron Microscope

December 1, 2001
Author(s)
Michael T. Postek, Andras Vladar
Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130-nm, and 100-nm, and even smaller linewidths and high-aspect-ratio structures, the scanning electron

Nanomachining of Si with Si3N4 Masks Patterned by Scanning

November 1, 2001
Author(s)
F S. Chien, John A. Dagata, W F. Hsieh, S Gwo
We demonstrate that local oxidation of silicon nitride films deposited on conductive substrates with a conductive-probe atomic force microscope (AFM) is a very promising approach for nanofabrication. Scanning Auger microscopy and spectroscopy are employed

Trial Shape-Sensitive Linewidth Measurement System

November 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
This is a report for a project to develop a scanning electron microscope (SEM) based shape-sensitive linewidth measurement system by improving the method by improving the method by which SEM data are analyzed. We report significant developments in

Accuracy and Versatility of the NIST M48 Coordinate Measuring Machine

October 1, 2001
Author(s)
John R. Stoup, Theodore D. Doiron
The NIST Is continuing to develop the ability to perform accurate, traceable measurements on a wide range of artifacts using a very precise, error-mapped coordinate measuring machine (CMM). The NIST M48 CMM has promised accuracy and versatility for many

Some Developments at NIST on Traceability in Dimensional Measurements

October 1, 2001
Author(s)
Dennis A. Swyt, Steven D. Phillips, J Palmateer
This paper reports to the international community on recent developments in technical ;policies, programs, and capabilities at the U.S. National Institute of Standards and Technology (NIST) related to traceability in dimensional measurements. These

NIST-ASME Workshop on Uncertainty in Dimensional Measurements

September 1, 2001
Author(s)
Dennis A. Swyt
A 2 1/2-day workshop on problems in use of uncertainty in dimensional measurements sponsored by NIST and ASME was held June 5-7, 2001, at NIST in Gaithersburg, MD. The workshop was attended by fifty-six representatives of organizations including

NISURF-II, An Upgraded Surface Measuring Facility

September 1, 2001
Author(s)
S Z. Zahwi, M F. Koura, Thomas Brian Renegar, A M. Mekawi
During 1982-1985, a cooperative project was made between the National Bureau of Standards (NBS) at that time (now National Institute of Standards and Technology (NIST - USA)) and the National Institute for Standards (NIS - Egypt) to establish a

Active Monitoring and Control of Electron-Beam-Induced Contaminaition

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, R Vane
The vacuum system of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of these

Active Monitoring and Control of Electron-Beam-Induced Contamination

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, R Vane
The vacuum systems of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of these

Comparison of Edge Detection Methods Using a Prototype Overlay Calibration Artifact

August 1, 2001
Author(s)
Richard M. Silver, Jay S. Jun, Edward A. Kornegay, R Morton
Accurate overlay measurements rely on robust, repeatable, and accurate feature position determination. In our effort to develop traceable we have examined a number of and the parameters which affect those measurements. The samples used in this study are a

Edge Determination for Polycrystalline Silicon Lines on Gate Oxide

August 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek
In a scanning electron microscope (SEM) top-down secondary electron image, areas within a few tens of nanometers of the line edges arc characteristically brighter than the rest of the image. In general, the shape of the secondary electron signal within

Electric Force Microscopy with a Single Carbon Nanotube Tip

August 1, 2001
Author(s)
John A. Dagata, F S. Chien, S Gwo, K Morimoto, T Inoue, J Itoh, H Yokoyama
Carbon nanotube tips offer a significant improvement over standard scanned probe microscope (SPM) tips for electrical characterization of nanodevice structures. Carbon nanotube tips are compatible with requirements for integrated SPM probe station

Problem with Submicrometer-linewidth Standards and A Possible Solution

August 1, 2001
Author(s)
James E. Potzick
Traceable linewidth measurements of tiny features on photomasks and wafers present interesting challenges. Usually technical solutions exist for the problems encountered, but traceability can be costly in time and labor. A measurement is useful only if its

Problem With Submicrometer-Linewidth Standards and a Proposed Solution

August 1, 2001
Author(s)
James E. Potzick
Traceable linewidth measurements of tiny features on photomasks and wafers present interesting challenges. Usually technical solutions exist for the problems encountered, but traceability can be costly in time and labor. A measurement is useful only if its

Reference Material 8091: New Scanning Electron Microscope Sharpness Standard

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, Nien F. Zhang, Robert D. Larrabee, Samuel N. Jones, Russell E. Hajdaj
Reference Material (RM 8091) is intended primarily for use in checking the sharpness performance of scanning electron microscopes. It is supplied as a small, approximately 2 mm x 2 mm diced semiconductor chip. This sample is capable of being mounted

Reference Material 8091: New Scanning Electron Microscope Sharpness Standard

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, Nien F. Zhang, Robert D. Larrabee, Samuel N. Jones, Russell E. Hajdaj
All scanning electron microscope-based inspection instruments, whether they are in a laboratory or on the production line, slowly lose their performance and then the instrument is no longer capable of providing as good quality, sharp images as before. This
Was this page helpful?