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Manufacturing

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Displaying 1701 - 1725 of 2179

SEM Sentinel-SEM Performance Measurement System

August 1, 2001
Author(s)
Bradley N. Damazo, Andras Vladar, Alice V. Ling, Alkan Donmez, Michael T. Postek, Crossley E. Jayewardene
This paper describes the design and implementation of a system for monitoring the performance of a critical dimension measurement scanning electron microscope (CD-SEM). Experiments were performed for tests involving diagnosis of the vacuum system and

Silicon Single Atom Steps as AFM Height Standards

August 1, 2001
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, V W. Tsai, E. C. Williams, Theodore V. Vorburger, H Edwards, D Cook, P West, R Nyffenegger
Atomic force microscopes (AFMs) are used in the semiconductor industry for a variety of metrology purposes. Step height measurements at the nanometer level and roughness measurements at sub-nanometer levels are often of interest. To perform accurate

FEA Modeling and Hardness Performance Prediction of Rockwell Diamond Indenters

July 1, 2001
Author(s)
Hui Zhou, Jun-Feng Song, Samuel Low, Li Ma
The difficulty in manufacturing Rockwell diamond indenters to the required geometric specifications has resulted in most commercially manufactured indenters to vary in shape from one indenter to another. This difference in shape is thought to be a major

Single-Integral-Equation Method for Scattering by Dielectric Cylinders

July 1, 2001
Author(s)
Egon Marx
Electromagnetic scattering of an incident plane monochromatic wave by dielectric or finitely conducting infinite cylinders of arbitrary shape, possibly in the presence of a substrate, can be reduced to the solution of scalar Helmholtz equations in two

Single-Integral-Equation Method for Three-Dimensional Scattering

July 1, 2001
Author(s)
Egon Marx
The fields scattered by a homogeneous dielectric or finitely conducting object can be obtained from two tangential vector fields, the components of the electric and magnetic fields, on the interface. We have adapted the single-integral-equation method for

Critical Dimension Metrology in the Scanning Electron Microscope

June 29, 2001
Author(s)
Michael T. Postek, Andras Vladar
Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130, 100 nanometer and even smaller linewidths and high aspect ratio structures, the scanning electron

Analysis of Dimensional Metrology Standards

June 1, 2001
Author(s)
Thomas R. Kramer, John Evans, Simon P. Frechette, John A. Horst, Hui-Min Huang, Elena R. Messina, Frederick M. Proctor, William G. Rippey, Harry A. Scott, Theodore V. Vorburger, Albert J. Wavering
This is an analysis of standards related to dimensional metrology, with recommendations regarding standards development. The analysis focuses on the degree to which existing and developing standards provide a complete set of non-overlapping specifications

Towards a Traceable Nanoscale Force Standard

May 1, 2001
Author(s)
Jon R. Pratt, David B. Newell, Edwin R. Williams, Douglas T. Smith, John A. Kramar
The National Institute of Standards and Technology has launched a five-year project to traceably link the International System of Units (SI) to forces between 10 -8N and 10 -2N. In this paper, we give a background and overview of this project, discuss the

The Role of Knowledge in Next-generation Product Development Systems

March 6, 2001
Author(s)
Simon Szykman, Ram D. Sriram, William Regli
Information technology has played an increasingly important role in engineering product development. Its influence over the past decade has been accelerating and its impact in the coming decade will undoubtedly be immense. This paper surveys several

A Careful Consideration of the Calibration Concept

March 1, 2001
Author(s)
Steven D. Phillips, William T. Estler, Theodore D. Doiron, K Eberhardt, M Levenson
This paper is a detailed discussion of the technical aspects of the calibration process with emphasis on the definition of the measurand, the conditions under which the calibration results are valid, and the subsequent use of the calibration results in

Shape-Sensitive Linewidth Measurement with the SEM Using a Model-Based Library

March 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek
In semiconductor electronics manufacturing, device performance often depends upon size. For example, microprocessor speed is linked to the width of transistor gates. Accurate measurement of feature width is an important but challenging problem. When a

Index of Refraction of Air

February 16, 2001
Author(s)
Jack A. Stone Jr., Jay H. Zimmerman
These Web pages are intended primarily as a computational tool that can be used to calculate the refractive index of air for a given wavelength of light and given atmospheric conditions (air temperature, pressure, and humidity). The calculations are

Documentary and Physical Standards for Surface Finish and Imperfections

February 1, 2001
Author(s)
Theodore V. Vorburger
Surface finish and imperfections are important properties of optical surfaces because they are caused by manufacturing limitations or defects and are linked to degradation of optical performance. Surface finish or surface roughness constitutes the numerous

Length and Dimensional Measurements at NIST

February 1, 2001
Author(s)
Dennis A. Swyt
This paper reports on the past, present, and future of length and dimensional measurements at NIST. It covers the evolution of the SI unit of length through its three definitions and the evolution of NBS-NIST dimensional measurement from early linescales

A Careful Consideration of the Calibration Concept

January 1, 2001
Author(s)
Steven D. Phillips, William T. Estler, Theodore D. Doiron, K Eberhardt, M. Levenson
This paper is a detailed discussion of the technical aspects of the calibration process with emphasis on the definition of the measurand, the conditions under which the calibration results are valid, and the subsequent use of the calibration results in

A Novel Artifact for Testing Large Coordinate Measuring Machines

January 1, 2001
Author(s)
Steven D. Phillips, Daniel S. Sawyer, Bruce R. Borchardt, D E. Ward, D E. Beutel
We present a high accuracy artifact useful for the evaluation of large CMMs. This artifact can be physically probed by the CMM in contrast to conventional techniques that use purely optical methods such as laser interferometers. The system can be used over

Atomic Level Surface Metrology

January 1, 2001
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Jun-Feng Song, Thomas Brian Renegar, Joseph Fu, Ndubuisi George Orji, V W. Tsai, E. C. Williams, H Edwards, D Cook, P West, R Nyffenegger
MotivationSemiconductor wafers and many types of optical elementsrequire ultra-smooth surfaces in order to functionas specifiedExamples:Laser gyro mirrors with rms roughness 0.1 nmSilicon gate oxides with thickness 3 nm,rms roughness must be significantly

Effect of Aluminum Flake Orientation on Coating Appearance

January 1, 2001
Author(s)
L Sung, Maria Nadal, M E. McKnight, Egon Marx, R Dutruc, B Laurenti
The orientation of platelet-like pigments in coatings is affected by the processing conditions resulting in appearance variations of the final product. A set of aluminum-flake pigmented coatings having different flake orientations was pre-pared using
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