Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Critical Dimension Metrology in the Scanning Electron Microscope



Michael T. Postek, Andras Vladar


Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130, 100 nanometer and even smaller linewidths and high aspect ratio structures, the scanning electron microscope (SEM) remains an important tool, which is extensively used in many phases of semiconductor manufacturing throughout the world. The SEM provides higher resolution analysis and inspection than that are possible by current techniques using the optical microscope and higher throughputs than scanned probe techniques. Furthermore, the SEM offers a wide variety of analytical modes, each contributing unique information regarding the physical, chemical and electrical properties of a particular specimen, device or circuit. Due to recent developments scientist and engineers are finding and putting into practice new, very accurate and fast SEM based measuring methods in research and production of microelectronic devices.
Chapter in: Handbook of Silicon Semiconductor Metrology, A.C. Diebold
Publisher Info
CRC Press,


backscattered, calibration, critical dimensions, electrons, metrology, scanning electron microscope, standards


Postek, M. and Vladar, A. (2001), Critical Dimension Metrology in the Scanning Electron Microscope, CRC Press, (Accessed March 1, 2024)
Created June 28, 2001, Updated October 12, 2021