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Critical Dimension Metrology and the Scanning Electron Microscope

Published

Author(s)

Michael T. Postek, Andras Vladar

Abstract

Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130-nm, and 100-nm, and even smaller linewidths and high-aspect-ratio structures, the scanning electron microscope (SEM) remains an important tool, one extensively used in many phases of semiconductor manufacturing throughout the world. The SEM provides higher-resolution analysis and inspection than is possible by current techniques using the optical microscope and higher throughputs than scanned probe techniques. Furthermore, the SEM offers a wide variety of analytical modes, each contributing unique information regarding the physical, chemical and electrical properties of a particular specimen, device or circuit (3). Due to recent developments scientist and engineers are finding and putting into practice new, very accurate and fast SEM-based measuring methods in research and production of microelectronic devices.
Citation
Critical Dimension Metrology and the Scanning Electron Microscope
Volume
14
Publisher Info
Handbook of Silicon Semiconductor Metrology Chapter in Handbook of Silicon Semiconductor Metrology,

Keywords

backscattered, calibration, critical dimensions, electron microscope, electrons, metrology, scanning electron, standards

Citation

Postek, M. and Vladar, A. (2001), Critical Dimension Metrology and the Scanning Electron Microscope, Handbook of Silicon Semiconductor Metrology Chapter in Handbook of Silicon Semiconductor Metrology, (Accessed June 22, 2024)

Issues

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Created December 1, 2001, Updated February 19, 2017