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Displaying 201 - 225 of 690

Parameter Estimation and Uncertainty Evaluation in a Low Rician K-Factor Reverberation-Chamber Environment

October 15, 2014
Author(s)
Chih-Ming Wang, Catherine A. Remley, Ansgar T. Kirk, Ryan J. Pirkl, Christopher L. Holloway, Dylan F. Williams, Paul D. Hale
In this paper we study statistical methods for estimating the Rician K-factor when this parameter is small. A fiducial approach for making statistical inference on the K-factor is discussed. The approach requires a Monte Carlo method to compute the

NIST Framework and Roadmap for Smart Grid Interoperability Standards, Release 3.0

October 1, 2014
Author(s)
Chris Greer, David A. Wollman, Dean Prochaska, Paul A. Boynton, Jeffrey A. Mazer, Cuong Nguyen, Gerald FitzPatrick, Thomas L. Nelson, Galen H. Koepke, Allen R. Hefner Jr., Victoria Yan Pillitteri, Tanya L. Brewer, Nada T. Golmie, David H. Su, Allan C. Eustis, David Holmberg, Steven T. Bushby
Section 1305 of the Energy Independence and Security Act (EISA) of 2007 (Pub. L. 110-140) directs NIST ‘‘to coordinate the development of a framework that includes protocols and model standards for information management to achieve interoperability of

Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs

September 15, 2014
Author(s)
Tam H. Duong, Allen R. Hefner Jr., Jose M. Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour
The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and

A 100 Tohm Guarded Hamon Transfer Standard

August 24, 2014
Author(s)
Dean G. Jarrett, Edward O'Brien, Marlin E. Kraft
Guarded Hamon transfer standards are used at NIST for scaling to high resistance levels. An improved design for a guarded Hamon transfer standard in the range from 1 TΩ to 100 TΩ is described. Measurements taken to select the primary and guard resistor

Photonic-assisted Endoscopic Analysis of Guided W-band Pulses

August 24, 2014
Author(s)
Jeffrey A. Jargon, DongJoon Lee, JaeYong Kwon
We present a photonic-assisted time-domain measurement technique for exploring millimeter-wave propagation through a W-band waveguide. The electric fields, guided inside a rectangular waveguide, are sampled using a sub-millimeter-scale electro-optic probe

Broadband Rydberg Atom Based Self-Calibrating RF E-field Probe

August 16, 2014
Author(s)
Christopher L. Holloway, Joshua A. Gordon, Steven R. Jefferts, Thomas P. Heavner
We present a significantly new approach for an electric (E) field probe. The probe is based on the interaction of RF-fields with Rydberg atoms, where alkali atoms are excited optically to Rydberg states and the applied RF-field alters the resonant state of

Characterizing a Device's susceptibility to broadband signals: A case study

August 4, 2014
Author(s)
Jason B. Coder, John M. Ladbury, David Hunter
It is common for electronic devices to be tested for their susceptibility to radiated signals they may be exposed to during their normal operation. A reverberation chamber is well suited to perform this type of testing because it can expose the device

Dielectric characterization by microwave cavity perturbation corrected for non-uniform fields

July 23, 2014
Author(s)
Nathan D. Orloff, Jan Obrzut, Christian J. Long, Thomas F. Lam, James C. Booth, David R. Novotny, James A. Liddle, Pavel Kabos
The non-uniform fields that occur due to the slot in the cavity through which the sample is inserted and those due to the sample geometry itself decrease the accuracy of dielectric characterization by cavity perturbation at microwave frequencies. To

A Prescription for THz Transistor Characterization

April 4, 2014
Author(s)
Dylan F. Williams
Advances in microwave wafer probes and vector network analyzers have opened up a whole new world of discovery in microwave metrology, making possible accurate on-wafer measurements in printed transmission lines at microwave, millimeter-wave, sub-millimeter

Calibrations for Millimeter-Wave Silicon Transistor Characterization

March 1, 2014
Author(s)
Dylan F. Williams, Phillip Corson, Sharma Jahnavi, Krishnaswamy Harish, Wei Tai, George Zacharias, Ricketts David, Watson Paul, Dacquay Eric, Voinigescu Sorin
This paper compares on-wafer thru-reflect-line (TRL) and off-wafer short-open-load-thru (SOLT) and line-reflect-reflect-match (LRRM) vector-network-analyzer probe-tip calibrations for amplifier characterization and parasitic-extraction calibrations for

Designing High-Performance PbS and PbSe Nanocrystal Electronic Devices through Stepwise, Post-Synthesis, Colloidal Atomic Layer Deposition

February 6, 2014
Author(s)
Soong Ju Oh, Nathaniel E. Berry, Hi-Hyuk Choi, E. A. Gaulding, Hangfei Lin, Taejong Paik, Benjamin T. Diroll, Shinichiro Muramoto, Murray B. Christopher, Cherie R. Kagan
We report a facile, solution based, post synthetic colloidal atomic layer deposition (PS-cALD) process to engineer the surface stoichiometry and therefore electronic properties of lead chalcogenide nanocrystal (NC) thin films. Using the stepwise and

A four-pixel single-photon pulse-position array fabricated from WSi superconducting nanowire single- photon detectors

February 3, 2014
Author(s)
Varun B. Verma, Robert D. Horansky, Francesco Marsili, Jeffrey Stern, Matthew Shaw, Adriana E. Lita, Richard P. Mirin, Sae Woo Nam
We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors. For an N × N array, only 2 × N wires are required to obtain the position of a detection event

Tunable electrical conductivity in metal-organic framework thin film devices

January 3, 2014
Author(s)
Albert A. Talin, Andrea Centrone, Alexandra C. Ford, Michael E. Foster, Vitalie Stavila, Paul M. Haney, Robert A. Kinney, Veronika Szalai, Farid El Gabaly, Heayoung Yoon, Francois Leonard, Mark Allendorf
We report a strategy for realizing tunable electrical conductivity in MOFs in which the nanopores are infiltrated with redox-active, conjugated guest molecules. This approach is demonstrated using thin-film devices of the MOF Cu3(BTC)2 (also known as HKUST

10 TOhm and 100 TOhm High Resistance Measurements at NIST

September 25, 2013
Author(s)
Dean G. Jarrett, Marlin E. Kraft
The measurement techniques, standards, and bridges used to calibrate standard resistors in the 10 TΩ to 100TΩ range at NIST are described. Standard resistors, guarded Hamon transfer standard, and 10:1 and 100:1 bridge ratios, were used to provide multiple

On the Link Between Insertion Loss and Lower Bound of Efficiency

August 9, 2013
Author(s)
Levon Barsikyan, Jason Coder, Mark Golkowski, John M. Ladbury
We investigate the effect of chamber loss on the recently developed 2-port antenna model and the associated method of determining antenna efficiency. The loss in the reverberation chamber was controlled using microwave absorbing foam creating four

Traceability for Aerosol Electrometer in the fA Range

June 1, 2013
Author(s)
Dean G. Jarrett, Miles Owen
Described here are the configurations and procedures used to provide traceability to electrical standards for an aerosol electrometer calibration in the range ± 20 fA to ± 40 fA. The technique used here simulated the condition of a current induced when

The Forthcoming IEEE Standard 1696 on Test Methods for Characterizing Circuit Probes

May 6, 2013
Author(s)
Nicholas Paulter, John Jendzurski, Mike McTigue, Bill Hagerup, Thomas E. Linnenbrink
The Technical Committee 10 (TC10) of the IEEE Instrumentation and Measurement Society initiated a new standards activity in 2006 for the development of test methods to characterize the performance of circuit probes. This standard contains a set of
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