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Calibrations for Millimeter-Wave Silicon Transistor Characterization



Dylan F. Williams, Phillip Corson, Sharma Jahnavi, Krishnaswamy Harish, Wei Tai, George Zacharias, Ricketts David, Watson Paul, Dacquay Eric, Voinigescu Sorin


This paper compares on-wafer thru-reflect-line (TRL) and off-wafer short-open-load-thru (SOLT) and line-reflect-reflect-match (LRRM) vector-network-analyzer probe-tip calibrations for amplifier characterization and parasitic-extraction calibrations for transistor characterization on silicon integrated circuits at millimeter-wave frequencies. We show that on-wafer calibrations generally outperform off-wafer and LRRM probe-tip calibrations at millimeter-wave frequencies. However, certain parasitic-extraction algorithms designed specifically to remove contact pads, transmission-lines, and access vias correct for much of the error in off-wafer calibrations.
IEEE Transactions on Microwave Theory and Techniques


Calibration, measurement, millimeter wave, scattering parameters, silicon, transistor, vector network analyzer(VNA)


Williams, D. , Corson, P. , Jahnavi, S. , Harish, K. , Tai, W. , Zacharias, G. , David, R. , Paul, W. , Eric, D. and Sorin, V. (2014), Calibrations for Millimeter-Wave Silicon Transistor Characterization, IEEE Transactions on Microwave Theory and Techniques, [online], (Accessed April 18, 2024)
Created March 1, 2014, Updated January 27, 2020