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Journals

Ultrafast Spin Phenomena in Highly Excited N-Doped GaAs

Author(s)
R Bratschitsch, Z Chen, Steven T. Cundiff
We perform time-resolved Faraday rotation exeriments on undoped and n-doped GaAs samples at high optical excitation densities. The Faraday rotation signal...

Absorption Spectroscopy of EBT Model GAFCHROMIC TM Film

Author(s)
Slobodan Devic, Tomic Nada, Zhiyu Pang, Jan Seuntjens, Ervin Podgorsak, C K. Ross, Norman V. Klassen, Christopher G. Soares
The introduction of radiochromic films has solved some of the problems associated with conventional 2D radiation detectors. Their high spatial resolution, low...

Influence of Polarity on GaN Thermal Stability

Author(s)
M A. Mastro, O M. Kryliouk, T J. Anderson, Albert Davydov, Alexander J. Shapiro
A comparative study of the stability of Ga- and N-polar GaN films was made in different gas ambients (N2, H2, NH3, HCl). The Ga-polar films were observed to...

InN Layers Grown by HVPE

Author(s)
A Syrkin, V Ivantsov, A Usikov, Vladimir A. Dmitriev, G Chambard, P Ruterana, Albert Davydov, Siddarth Sundaresan, E Lutsenko, A V. Mudryi, E D. Readinger, G D. Chern-Metcalfe, M Wraback
We report on the first time demonstration and properties of high quality HVPE InN and on successful subsequent MBE growth of InN layers with improved...

Perpendicular Anisotropy in Co/Pd Multilayers

Author(s)
J I. Hong, S Sankar, A. E. Berkowitz, William F. Egelhoff Jr.
The two principal mechanisms for explaining the perpendicular anisotropy in Co-Pd multilayers were investigated. These mechanisms are the broken symmetry at...

Extreme Anisotropy of Diffuse Interfaces in Crystals

Author(s)
N D. Alikakos, P W. Bates, John W. Cahn, P C. Fife, G Fusco, G B. Tanoglu
We investigate a model of anisotropic diffuse interfaces in ordered FCC crystals introduced recently by Braun et al, focussing on parametric conditions which...

Comment on Phys. Rev. Lett. 95, 017201 (2005)

Author(s)
J A. Bland, S J. Steinmuller, T Trypiniotis, William F. Egelhoff Jr.
In their article High Temperature Ferromagnetism in GaAs-Based Heterostructures with Mn ? Doping , the authors A. M. Nazmul et al. report finding remarkably...

Manufacture of Extremely Flat 300 mm Silicon Wafers

Author(s)
Marc Tricard, Paul Dumas, Christopher Hall, Ulf Griesmann, Quandou (. Wang
The flatness requirement for silicon wafers at the exposure site will be lower than 50 nm by 2010 and may be as low as 25nm by 2015 (TRS 2005). This creates new...

Atomic Transition Probabilities for DyI and DyII

Author(s)
M E. Wickliffe, James E. Lawler, Gillian Nave
Atomic transition probabilities for 915 spectral lines of neutral and singly ionized dysprosium are reported. Typical uncertainties are less than +/- 10%...
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