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Influence of Polarity on GaN Thermal Stability

Published

Author(s)

M A. Mastro, O M. Kryliouk, T J. Anderson, Albert Davydov, Alexander J. Shapiro

Abstract

A comparative study of the stability of Ga- and N-polar GaN films was made in different gas ambients (N2, H2, NH3, HCl). The Ga-polar films were observed to undergo a dissociative sublimation, while the N-polar films formed condensed Ga in addition to the gaseous species. The difference in polarity affects the morphology and bonding on the surface, and thus stability of the atoms bonded to the surface.PACS: 68.60.Dv; 81.15.Gh; 68.55.-a
Citation
Journal of Crystal Growth

Keywords

decomposition, gallium nitride, polarity, thermal stability

Citation

Mastro, M. , Kryliouk, O. , Anderson, T. , Davydov, A. and Shapiro, A. (2021), Influence of Polarity on GaN Thermal Stability, Journal of Crystal Growth (Accessed April 20, 2024)
Created October 12, 2021