Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

InN Layers Grown by HVPE



A Syrkin, V Ivantsov, A Usikov, Vladimir A. Dmitriev, G Chambard, P Ruterana, Albert Davydov, Siddarth Sundaresan, E Lutsenko, A V. Mudryi, E D. Readinger, G D. Chern-Metcalfe, M Wraback


We report on the first time demonstration and properties of high quality HVPE InN and on successful subsequent MBE growth of InN layers with improved characteristics on template substrates. InN layers were grown on GaN/sapphire HVPE grown templates. The (00.2) XRD rocking curves (RC) had the FWHM of about 375 arc sec, being the narrowest XRD RCs ever reported for HVPE INN. Reciprocal space mapping (RSM) confirms pseudomorphic growth of InN on GaN/sapphire template with fully strained (compressed) InN. Transmission Electron Microscopy (TEM) revealed that at the GaN/InN interface, the threading dislocations that come from GaN were transmitted into the InN later. We estimated the dislocation density in HVPE grown InN to be in the low 10 (superscript 9) cm (superscript -2) range. Reflection high energy electron diffraction (RHEED) confirmed monocrystalline structure of the InN layers grown on the GaN/sapphire templates. Layers photoluminescence (PL) showed edge emission around 0.8 eV. Hall measured free electron concentration was in the range of 10 (subscript 19) -10 (subscript 20) cm (subscript -3) and electron mobility was 200 cm (subscript 2)/V s. MBE growth of InN was performed on the HVPE grown InN template substrate demonstrating the improvement of material quality in the case of homo-epitaxial growth of InN. For the first time high quality HVPE InN was grown opening new way for further development of this material.
Physica Status Solidi


hall effect, semiconductor, thin films


Syrkin, A. , Ivantsov, V. , Usikov, A. , Dmitriev, V. , Chambard, G. , Ruterana, P. , Davydov, A. , Sundaresan, S. , Lutsenko, E. , Mudryi, A. , Readinger, E. , Chern-Metcalfe, G. and Wraback, M. (2021), InN Layers Grown by HVPE, Physica Status Solidi (Accessed June 23, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created October 12, 2021