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InN Layers Grown by HVPE

Published

Author(s)

A Syrkin, V Ivantsov, A Usikov, Vladimir A. Dmitriev, G Chambard, P Ruterana, Albert Davydov, Siddarth Sundaresan, E Lutsenko, A V. Mudryi, E D. Readinger, G D. Chern-Metcalfe, M Wraback

Abstract

We report on the first time demonstration and properties of high quality HVPE InN and on successful subsequent MBE growth of InN layers with improved characteristics on template substrates. InN layers were grown on GaN/sapphire HVPE grown templates. The (00.2) XRD rocking curves (RC) had the FWHM of about 375 arc sec, being the narrowest XRD RCs ever reported for HVPE INN. Reciprocal space mapping (RSM) confirms pseudomorphic growth of InN on GaN/sapphire template with fully strained (compressed) InN. Transmission Electron Microscopy (TEM) revealed that at the GaN/InN interface, the threading dislocations that come from GaN were transmitted into the InN later. We estimated the dislocation density in HVPE grown InN to be in the low 10 (superscript 9) cm (superscript -2) range. Reflection high energy electron diffraction (RHEED) confirmed monocrystalline structure of the InN layers grown on the GaN/sapphire templates. Layers photoluminescence (PL) showed edge emission around 0.8 eV. Hall measured free electron concentration was in the range of 10 (subscript 19) -10 (subscript 20) cm (subscript -3) and electron mobility was 200 cm (subscript 2)/V s. MBE growth of InN was performed on the HVPE grown InN template substrate demonstrating the improvement of material quality in the case of homo-epitaxial growth of InN. For the first time high quality HVPE InN was grown opening new way for further development of this material.
Citation
Physica Status Solidi

Keywords

hall effect, semiconductor, thin films

Citation

Syrkin, A. , Ivantsov, V. , Usikov, A. , Dmitriev, V. , Chambard, G. , Ruterana, P. , Davydov, A. , Sundaresan, S. , Lutsenko, E. , Mudryi, A. , Readinger, E. , Chern-Metcalfe, G. and Wraback, M. (2021), InN Layers Grown by HVPE, Physica Status Solidi (Accessed June 23, 2024)

Issues

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Created October 12, 2021