Bratschitsch, R.
, Chen, Z.
and Cundiff, S.
(2021),
Ultrafast Spin Phenomena in Highly Excited N-Doped GaAs, Physica Status Solidi
(Accessed October 10, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Ultrafast Spin Phenomena in Highly Excited N-Doped GaAs
Published
Author(s)
R Bratschitsch, Z Chen,
Abstract
We perform time-resolved Faraday rotation exeriments on undoped and n-doped GaAs samples at high optical excitation densities. The Faraday rotation signal linearly increases with optical excitation density. The excitation dependence of the electron g-factor shows that many-body effects strongly affect spin phenomena in semiconductors.Citation
Physica Status Solidi
Pub Type
Journals
Keywords
semiconductor, spin, ultrafast
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 12, 2021