An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Ultrafast Spin Phenomena in Highly Excited N-Doped GaAs
Published
Author(s)
R Bratschitsch, Z Chen, Steven T. Cundiff
Abstract
We perform time-resolved Faraday rotation exeriments on undoped and n-doped GaAs samples at high optical excitation densities. The Faraday rotation signal linearly increases with optical excitation density. The excitation dependence of the electron g-factor shows that many-body effects strongly affect spin phenomena in semiconductors.
Citation
Physica Status Solidi
Pub Type
Journals
Keywords
semiconductor, spin, ultrafast
Citation
Bratschitsch, R.
, Chen, Z.
and Cundiff, S.
(2021),
Ultrafast Spin Phenomena in Highly Excited N-Doped GaAs, Physica Status Solidi
(Accessed May 1, 2024)