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Ultrafast Spin Phenomena in Highly Excited N-Doped GaAs

Published

Author(s)

R Bratschitsch, Z Chen, Steven T. Cundiff

Abstract

We perform time-resolved Faraday rotation exeriments on undoped and n-doped GaAs samples at high optical excitation densities. The Faraday rotation signal linearly increases with optical excitation density. The excitation dependence of the electron g-factor shows that many-body effects strongly affect spin phenomena in semiconductors.
Citation
Physica Status Solidi

Keywords

semiconductor, spin, ultrafast

Citation

Bratschitsch, R. , Chen, Z. and Cundiff, S. (2021), Ultrafast Spin Phenomena in Highly Excited N-Doped GaAs, Physica Status Solidi (Accessed March 5, 2024)
Created October 12, 2021