Ultrafast Spin Phenomena in Highly Excited N-Doped GaAs
R Bratschitsch, Z Chen, Steven T. Cundiff
We perform time-resolved Faraday rotation exeriments on undoped and n-doped GaAs samples at high optical excitation densities. The Faraday rotation signal linearly increases with optical excitation density. The excitation dependence of the electron g-factor shows that many-body effects strongly affect spin phenomena in semiconductors.
Physica Status Solidi
semiconductor, spin, ultrafast
, Chen, Z.
and Cundiff, S.
Ultrafast Spin Phenomena in Highly Excited N-Doped GaAs, Physica Status Solidi
(Accessed March 5, 2024)