Bae, S.
, Egelhoff Jr., W.
, Chen, P.
, Zurn, S.
, Sheppard, L.
, Torok, E.
and Judy, J.
(2021),
Application of -Fe203 Bottom GMR Spin-Valve for Magnetoresistive Random Access Memory (MRAM), Proceedings of the International Conference on Ferrites
(Accessed April 24, 2024)
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Application of -Fe203 Bottom GMR Spin-Valve for Magnetoresistive Random Access Memory (MRAM)
Published
Author(s)
S E. Bae, , P J. Chen, S Zurn, L Sheppard, E J. Torok, J H. Judy
Abstract
The possibility of the application of -Fe203 bottom GMR spin-valve for magnetoresistive random access memory (MRAM) device has been investigated for the first time from the point view of magnetic properties of spin-valve, device fabrication, and thermal and chemical stability. It is revealed that the GMR ratio, pinned-layer coercivity, Hcp, and free-layer coercivity, Hcf, are strongly affected by the -Fe203 anti-ferromagnetic layer thickness, which is related to surface roughness and grain size of the pinned and free magnetic layers. A GMR spin-valve with 25nm thick -Fe203 layer had small pinned and free coericivties with a GMR ratio as high as 14.4 % and very good thermal stability even after patterning with micron dimension. The good GMR characteristics of -Fe203 bottom spin-valve for a MRAM device application is mainly thought to be attributed to the high blocking temperature (approximately 375 C to 390 C) and the high chemical corrosion resistance of anti-ferromagnetic -Fe203 material.Citation
Proceedings of the International Conference on Ferrites
Pub Type
Journals
Keywords
exchange bias, giant magnetoresistive random access mem
Citation
Created October 12, 2021