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Conferences

Scalar Dissipation in Axisymmetric Jets

Author(s)
William M. Pitts
Scalar dissipation, defined as twice the product of the molecular diffusion coefficient and the local gradient of the mixture fraction taken as a dot product

A Knowledge-Based Inspection Workstation

Author(s)
Elena R. Messina, John A. Horst, Thomas R. Kramer, Hui-Min Huang, Tsung-Ming Tsai, E Amatucci
We are building an inspection workstation development environment to use as a testbed for understanding what types of knowledge, e.g., data, algorithms, and

NIST Programs for Calibrations in the Far Ultraviolet Spectral Region

Author(s)
Robert E. Vest, L R. Canfield, Mitchell L. Furst, R M. Graves, A D. Hamilton, L R. Hughey, Thomas B. Lucatorto, R P. Madden
The National Institute of Standards and Technology (NIST) serves the growing ultraviolet user community by providing calibration services throughout the

Experiments in Dilute Atomic Bose-Einstein Condensation

Author(s)
Eric A. Cornell, J R. Ensher, C E. Wieman
Why BEC? - In the month we began writing this paper, fourteen papers on the explicit topic of Bose-Einstein condensation (BEC) in a dilute gas appeared in the

Thermophysical Properties of Process Gases

Author(s)
John J. Hurly, Michael R. Moldover
We measured the speed of sound in the process gases Cl 2, HBr, BCl 3, and in the surrogate gases SF 6, CF 4, and C 2F 6. The data range up to 475 K (200 C) and

Grating Pitch Measurements With the Molecular Measuring Machine

Author(s)
John A. Kramar, Jay S. Jun, William B. Penzes, Fredric Scire, E C. Teague, John S. Villarrubia
At the National Institute of Standards and Technology, we are building a metrology instrument called the Molecular Measuring Machine (M^3) with the goal of

Antenna-Coupled Niobium Bolometers for MM-Wave Imaging Arrays

Author(s)
Shalva Nolen, Jonathan A. Koch, Nicholas Paulter, Carl D. Reintsema, Erich N. Grossman
Antenna-coupled thin-film niobium microbolometers designed for mm-wave imaging arrays have been fabricated and their electrical properties measured. The niobium

Step Height Metrology for Data Storage Applications

Author(s)
R Koning, Ronald G. Dixson, Joseph Fu, Thomas Brian Renegar, Theodore V. Vorburger, V W. Tsai, Michael T. Postek
The measurements of bump heights and pit depth on compact discs (CD) with atomic force microscopes (AFMs) are quite different from the measurement of step

IGBT Model Validation for Soft-Switching Applications

Author(s)
David W. Berning, Allen R. Hefner Jr.
Techniques are described for validating the performance of Insulated-Gate Bipolar Transistor (IGBT) circuit simulator models for soft-switching circuit

Step-height Metrology for Data Storage Applications

Author(s)
R Koning, Ronald G. Dixson, Joseph Fu, Thomas Brian Renegar, Theodore V. Vorburger, V W. Tsai, Michael T. Postek
The measurement of bump heights and pit depth on compact discs (CD) with atomic force microscopes (AFMs) is quite different from the measurement of step heights

Arrayed DBR Waveguide Lasers for the ITU Grid

Author(s)
D. L. Veasey, David S. Funk, Gregory E. Obarski, M. A. Mccoy, M. P. Bendett, Joseph S. Hayden
Waveguide lasers fabricated in Yb/Er-codoped phosphate glass operating at wavelengths between 1520-1590 nm are promising low-cost laser sources for use in

TREC-6 1997 Spoken Document Retrieval Track Overview and Results

Author(s)
John S. Garofolo, Ellen M. Voorhees, Vincent M. Stanford, K Sparck Jones
This paper describes the 1997 TREC-6 Spoken Document Retrieval (SDR) Track which implemented a first evaluation of retrieval of broadcast news excerpts using a

Characteristic impedance of microstrip on silicon

Author(s)
Dylan F. Williams, Bradley K. Alpert
In this paper, we compare the power-voltage, power-current, and causal definitions of the characteristic impedance of microstrip transmission lines on silicon

Characteristic Impedance of Microstrip on Silicon

Author(s)
Dylan F. Williams, Bradley K. Alpert
We compare power-voltage, power-current, and causal definitions of the characteristic impedance of microstrip transmission lines on silicon substrates.
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