A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide

Published

January 1, 2000

Author(s)

J H. Edgar, Larry Robins, S E. Coatney, L Liu, J Chaudhuri, K Ignatiev, Z J. Rek

Abstract

The crystal structure and optical properties of AlN single crystals prepared by the sublimation-recondensation method were analyzed by cathodoluminescence (CL) spectroscopy, Raman spectroscopy, and synchrotron white-beam x-ray topography (SWBXT). Needles and platelets freely and randomly nucleated on the crucible wall exhibited near-band-edge luminescence, narrow Raman peak widths, and a relatively low dislocation density. In contrast, thick films deposited on on-axis, (0001) 6H-silicon carbide wafers exhibited luminescence only at 3.5 eV, had much broader Raman peak widths, and a mosaic crystal structure.

Proceedings Title

Proceedings of the International Conference on Silicon Carbide and Related Materials 1999

Volume

338-342

Conference Dates

September 28, 1999

Conference Location

Undefined

Conference Title

International Conference on Silicon Carbide and Related Materials

Pub Type

Conferences

Download Paper

Local Download

Keywords

bulk crystal growth, cathodoluminescence, Raman spectroscopy, x-ray topography

Citation

Edgar, J. , Robins, L. , Coatney, S. , Liu, L. , Chaudhuri, J. , Ignatiev, K. and Rek, Z. (2000), A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide, Proceedings of the International Conference on Silicon Carbide and Related Materials 1999, Undefined, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=850353 (Accessed April 18, 2024)