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A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide

Published

Author(s)

J H. Edgar, Larry Robins, S E. Coatney, L Liu, J Chaudhuri, K Ignatiev, Z J. Rek

Abstract

The crystal structure and optical properties of AlN single crystals prepared by the sublimation-recondensation method were analyzed by cathodoluminescence (CL) spectroscopy, Raman spectroscopy, and synchrotron white-beam x-ray topography (SWBXT). Needles and platelets freely and randomly nucleated on the crucible wall exhibited near-band-edge luminescence, narrow Raman peak widths, and a relatively low dislocation density. In contrast, thick films deposited on on-axis, (0001) 6H-silicon carbide wafers exhibited luminescence only at 3.5 eV, had much broader Raman peak widths, and a mosaic crystal structure.
Proceedings Title
Proceedings of the International Conference on Silicon Carbide and Related Materials 1999
Volume
338-342
Conference Dates
September 28, 1999
Conference Location
Undefined
Conference Title
International Conference on Silicon Carbide and Related Materials

Keywords

bulk crystal growth, cathodoluminescence, Raman spectroscopy, x-ray topography

Citation

Edgar, J. , Robins, L. , Coatney, S. , Liu, L. , Chaudhuri, J. , Ignatiev, K. and Rek, Z. (2000), A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide, Proceedings of the International Conference on Silicon Carbide and Related Materials 1999, Undefined, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=850353 (Accessed May 29, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 1999, Updated October 15, 2021