In Situ Atomic Absorption Monitoring with Substrate Reflection
S. P. Hays, Robert K. Hickernell, Kristine A. Bertness
We demonstrate a technique to apply real-time optical flux monitoring by in situ atomic absorption when the only available optical path through a molecular beam epitaxial growth chamber reflects from the substrate. Thin-film interference effects in the reflected signal were virtually eliminated during growth by using a collinear beam that has a wavelength very close to that of the group-III absorption line. This method enables atomic absorption monitoring to be applied to heterostructure growths without the need for real-time reflectance analysis. We demonstrated the technique by monitoring Ga flux during GaAs growth using a Mn lamp for the off-resonance source. The short-term uncertainty in the flux measurement was 0.6% (one standard deviation). Theroetical calculations indicated that approximately 0.2% and 0.3% maximum instantaneous error can be attained for Ga and Al, respectively, during the growth of vertical cavity surface emitting lasers.
Proc., SPIE, Vertical-Cavity Surface-Emitting Lasers IV
January 24-28, 2000
San Jose, CA
atomic absorption, optical flux monitoring, in situ, MBE, VCSEL
, Hickernell, R.
and Bertness, K.
In Situ Atomic Absorption Monitoring with Substrate Reflection, Proc., SPIE, Vertical-Cavity Surface-Emitting Lasers IV, San Jose, CA
(Accessed December 5, 2023)