Lee, V.
, Lin, E.
, Lan, J.
, Cheng, Y.
, Liou, H.
, Wu, W.
, Wang, Y.
, Feng, M.
and Chao, C.
(2000),
Investigation of N2 Plasma Effects on the Depth Profile of Hydrogen Silsesquioxane Thin Films Using High Resolution Specular X-Ray Reflectivity, Characterization and Metrology for ULSI Technology: 2000 International Conference, Gaithersburg, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853664
(Accessed December 14, 2024)
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Investigation of N2 Plasma Effects on the Depth Profile of Hydrogen Silsesquioxane Thin Films Using High Resolution Specular X-Ray Reflectivity
Published
Author(s)
V. J. Lee, , J K. Lan, Y L. Cheng, H C. Liou, , , M S. Feng, C G. Chao
Conference Location
Gaithersburg, MD
Conference Title
Characterization and Metrology for ULSI Technology: 2000 International Conference
Pub Type
Conferences
Download Paper
Keywords
density profile, electronic materials, exposure time, hydrogen silsesquioxane, low-k dielectric, plasma effect, plasma power, reflectivity, specular x-ray reflectivity, thin films
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 1999, Updated October 12, 2021