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Investigation of N2 Plasma Effects on the Depth Profile of Hydrogen Silsesquioxane Thin Films Using High Resolution Specular X-Ray Reflectivity

Published

Author(s)

V. J. Lee, Eric K. Lin, J K. Lan, Y L. Cheng, H C. Liou, Wen-Li Wu, Y L. Wang, M S. Feng, C G. Chao
Conference Location
Gaithersburg, MD
Conference Title
Characterization and Metrology for ULSI Technology: 2000 International Conference

Keywords

density profile, electronic materials, exposure time, hydrogen silsesquioxane, low-k dielectric, plasma effect, plasma power, reflectivity, specular x-ray reflectivity, thin films

Citation

Lee, V. , Lin, E. , Lan, J. , Cheng, Y. , Liou, H. , Wu, W. , Wang, Y. , Feng, M. and Chao, C. (2000), Investigation of N2 Plasma Effects on the Depth Profile of Hydrogen Silsesquioxane Thin Films Using High Resolution Specular X-Ray Reflectivity, Characterization and Metrology for ULSI Technology: 2000 International Conference, Gaithersburg, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853664 (Accessed April 24, 2024)
Created December 31, 1999, Updated October 12, 2021