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Search Publications by: John D. Gillaspy (Fed)

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Displaying 51 - 75 of 157

Accurate Modeling of Benchmark X-ray Spectra from Highly-Charged Ions of Tungsten

October 26, 2006
Author(s)
Y Ralchenko, Joseph N. Tan, John D. Gillaspy, Joshua M. Pomeroy, E Silver
We present detailed collisional-radiative modeling for the benchmark x-ray spectrum of highly-charged tungsten ions in the range between 3 \AA \ and 10 \AA produced in an Electron Beam Ion Trap (EBIT) with a beam energy of 4.08 keV. Remarkably good

Direct Observation of the 2 d3/2 - 2 d5/2 Ground State Splitting in Xe 9+

May 18, 2006
Author(s)
E Takacs, B Blagojevic, K Makonyi, E O. LeBigot, Csilla Szabo-Foster, Yong Sik Kim, John D. Gillaspy
We have used the NIST Electron Beam Ion Trap to observe a visible line at 598.30(13) nm that corresponds to the 4d9 2D3/2 - 4d9 2D5/2 magnetic dipole transition within the ground state configuration of Xe9+. We have found no evidence to support the claim

Low Jitter Metal Vapor Vacuum Arc Ion Source for EBIT Injections

June 27, 2005
Author(s)
G Holland, Craig N. Boyer, J Seely, Joseph N. Tan, Joshua M. Pomeroy, John D. Gillaspy
A metal vapor vacuum arc (MeVVA) ion source having eight different cathodes that are individually selectable via the control electronics and having low trigger jitter (200 ns) is described. The arc plasma is produced by means of a 26 kV, 125 A, 30 s pulse

Visible, EUV, and X-Ray Spectroscopy at the NIST EBIT Facility

April 24, 2004
Author(s)
John D. Gillaspy, B Blagojevic, Paul A. Dalgarno, K Fahey, V Kharchenko, J M. Laming, L Logosi, E-O Le Bigot, K Makonyi, L P. Ratliff, E Silver, H. Schnopper, E Takacs, J N. Tan, H Tawara, K Tokesi
After a brief introduction to the NIST EBIT facility, we present the results of three different types of experiments that have been carried out there recently: EUV and visible spectroscopy in support of the microelectronics industry, laboratory

Highly Charged Ion Bombardment of Silicon Surfaces

August 1, 2003
Author(s)
J E. Sanabia, S N. Goldie, L P. Ratliff, Lori S. Goldner, John D. Gillaspy
Visible photoluminescence from Si (100) surfaces irradiated by highly-charged ions has recently been reported. 1 This discovery has potential applications in silicon-based display technology and other opto-electronic devices and detectors. In an attempt to

EBIT Diagnostics Using X-ray Spectra of Highly Ionized Ne

May 1, 2003
Author(s)
M Matranga, M Barbera, A Maggio, G Peres, S Serio, E Takacs, E Silver, John D. Gillaspy, H. Schnopper, J M. Laming, J. Beeman, E. E. Haller, N. Madden
We have carried out a detailed analysis of highly ionized neon spectra collected at the NIST EBIT using an NTD germanium X-ray microcalorimeter developed at the Harvard-Smithsonian Center for Astrophysics [1]. Our attention was focused especially on the Ne

X-Ray Spectroscopy of Trapped Ions With a Microcalorimeter on the NIST Electron Beam Ion Trap

December 1, 2002
Author(s)
E Takacs, John D. Gillaspy, L P. Ratliff, K Makonyi, J M. Laming, E Silver, H. Schnopper, M Barbera, J. Beeman, E. E. Haller, N. Madden
The electron beam ion trap (EBIT) was invented about 15 years ago. Judging from the wide range of experiments performed on the machine since its inception, EBITs have become one of the most successful devices to Produce, trap and study the structure and