NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Highly Charged Ion Bombardment of Silicon Surfaces
Published
Author(s)
J E. Sanabia, S N. Goldie, L P. Ratliff, Lori S. Goldner, John D. Gillaspy
Abstract
Visible photoluminescence from Si (100) surfaces irradiated by highly-charged ions has recently been reported.1 This discovery has potential applications in silicon-based display technology and other opto-electronic devices and detectors. In an attempt to verify these results, highly charged ion-irradiated silicon samples were prepared at the Electron Beam Ion Trap facility at the National Institute of Standards and Technology. Two highly sensitive fluorescence detection schemes were employed, both using ultraviolet light while a spectrograph equipped with a liquid nitrogen-cooled charge-coupled device camera detected the fluorescence. The second detection scheme was a high throughput laser-scanning confocal microscope equipped with a photon-counting photomultiplier tube. We characterized the sensitivities in each detection scheme, allowing the assessment of the photoluminescence efficiency of Xe44+-Si (100). No photoluminescence was detected in either setup.
Proceedings Title
International Conference on the Application of Accelerators in Research and Industry|17th|Application of Accelerators in Research and Industry: Seventeenth International Conference on the Application of Accelerators in Research and Industry
Sanabia, J.
, Goldie, S.
, Ratliff, L.
, Goldner, L.
and Gillaspy, J.
(2003),
Highly Charged Ion Bombardment of Silicon Surfaces, International Conference on the Application of Accelerators in Research and Industry|17th|Application of Accelerators in Research and Industry: Seventeenth International Conference on the Application of Accelerators in Research and Industry, Undefined
(Accessed October 9, 2025)