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Displaying 1 - 25 of 42

On-Wafer Vector-Network-Analyzer Measurements at mK Temperatures

January 11, 2023
Author(s)
Elyse McEntee Wei, Richard Chamberlin, Nate Kilmer, Joshua Kast, Jake A. Connors, Dylan Williams
We describe a system for performing on-wafer vector-network-analyzer measurements from 100 MHz to 15 GHz at mK temperatures (i.e., less than 20 mK). We first demonstrate a camera-less probe positioning system and calibrate this system at 4.4 K. We then use

A 110 GHz Comb Generator in a 250 nm InP HBT Technology

April 18, 2022
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Paul D. Hale, Rob Jones, Ari Feldman
We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit is designed in a 250 nm Indium Phosphide (InP)

High-Gain 500-GHz InP HBT Power Amplifiers

January 31, 2022
Author(s)
Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman
We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm indium-phosphide double heterojunction bipolar transistors in a common-base configuration. The

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

On-Wafer Metrology of a Transmission Line Integrated Terahertz Source

May 10, 2020
Author(s)
Kassiopeia A. Smith, Bryan T. Bosworth, Nicholas R. Jungwirth, Jerome G. Cheron, Nathan D. Orloff, Christian J. Long, Dylan F. Williams, Richard A. Chamberlin, Franklyn J. Quinlan, Tara M. Fortier, Ari D. Feldman
A combination of on-wafer metrology and high-frequency network analysis was implemented to measure the response of transmission-line integrated Er-GaAs and InGaAs photomixers up to 1 THz to support the telecommunication and electronics industry.

Microwave Modeling and Characterization of Superconductive Circuits for Quantum Voltage Standard Applications at 4 Kelvin

February 10, 2020
Author(s)
Alirio De Jesus Soares Boaventura, Dylan F. Williams, Richard A. Chamberlin, Jerome G. Cheron, Anna E. Fox, Paul D. Dresselhaus, Peter F. Hopkins, Ian W. Haygood, Samuel P. Benz
We developed a cryogenic multiline thru-reflect-line (TRL) calibration kit for microwave characterizing of superconductive circuits used in the Josephson arbitrary waveform synthesizer of the national institute of standards and technology (NIST). We also

DARPA Organic Interconnect Characterization

January 27, 2020
Author(s)
Dylan Williams, Richard Chamberlin, Jerome Cheron, Sam Chitwood, Ken Willis, Brad Butler, Farhang Yazdani
We report on a study of interconnects fabricated on organic and silicon interposers used to connect state-of-the art digital, analog and RF chiplets commissioned by the U.S. Defense Advanced Research Projects Agency (DARPA). The interconnects were

Optimal Series Resistors for On-Wafer Calibrations

November 8, 2019
Author(s)
Jasper A. Drisko, Richard A. Chamberlin, James C. Booth, Nathan D. Orloff, Christian J. Long
The series resistor is a common on-wafer device typically used in the series-resistor calibration and for estimating the capacitance per unit length of coplanar waveguide transmission lines. While much work has been done using series resistors, this paper

Propagation of Compact-Modeling Measurement Uncertainty to 220 GHz Power-Amplifier Designs

November 5, 2018
Author(s)
Jerome Cheron, Dylan Williams, Konstanty Lukasik, Richard Chamberlin, Benjamin Jamroz, Erich N. Grossman, Wojciech Wiatr, Dominique Schreurs
We studied the impact of measurement uncertainties in a HBT model and their consequences on the electrical performance under large signal conditions at 9 GHz. Then we use the model with uncertainties to verify the ability of our model to accurately predict

Measurement and Modeling of Heterogeneous Chip-Scale Interconnections

October 22, 2018
Author(s)
Richard A. Chamberlin, Dylan F. Williams
We present precision scattering-parameter measurements of chip-to-chip connections in heterogeneous integrated circuits: indium phosphide or gallium nitride “chiplets” mounted on SiCMOS carrier chips. We demonstrate methodology, experimental results, and

On-Wafer Transistor Characterization to 750 GHz -the approach, results, and pitfalls

October 14, 2018
Author(s)
Dylan Williams, Jerome Cheron, Ben Jamroz, Richard Chamberlin
We review approaches developed at the National Institute of Standards and Technology for on-wafer transistor characterization and model extraction at sub-millimeter-wave wavelengths, and compare them to more common approaches developed for use at lower

Impact of Phase Calibration on EVM Measurement Quality

June 14, 2018
Author(s)
Diogo Ribeiro, Dylan Williams, Richard Chamberlin, Nuno B. Carvalho
In this paper, the calibrated measurement of wideband modulated signals by mixer-based large-signal network analyzers (LSNAs) will be evaluated, with a focus on the impact of the phase calibration in the measured error vector magnitude (EVM). The

Qualitative Multidimensional Calibration Comparison

January 15, 2018
Author(s)
Aric W. Sanders, Ronald A. Ginley, Christian J. Long, Jasper A. Drisko, Nathan D. Orloff, Richard A. Chamberlin
We present a technique for the visual comparison of any two vector network analyzer calibrations. This method visualizes the comparative action of the calibrations for multiple complex scattering parameters relative to the calibrated measurement plane