Measurement and Modeling of Heterogeneous Chip-Scale Interconnections
Richard A. Chamberlin, Dylan F. Williams
We present precision scattering-parameter measurements of chip-to-chip connections in heterogeneous integrated circuits: indium phosphide or gallium nitride chiplets mounted on SiCMOS carrier chips. We demonstrate methodology, experimental results, and modeling results of these chip- scale interconnections from DC to 110 GHz. We used Thru-Reflect-Line (TRL) on-wafer calibration to establish reference planes inside heterogeneous integrated circuits and then we translated those reference planes to the proximity of the chip-to-chip transitions to isolate their contribution to the scattering parameters.
IEEE Transactions on Microwave Theory and Techniques
and Williams, D.
Measurement and Modeling of Heterogeneous Chip-Scale Interconnections, IEEE Transactions on Microwave Theory and Techniques, [online], https://doi.org/10.1109/TMTT.2018.2873333
(Accessed December 7, 2023)