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Publications

Search Publications by

Jason Ryan (Fed)

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Displaying 26 - 50 of 57

Electron Spin Resonance Scanning Probe Spectroscopy for Ultra-Sensitive Biochemical Studies

April 22, 2015
Author(s)
Jason P. Campbell, Jason T. Ryan, Pragya R. Shrestha, Zhanglong Liu, Canute I. Vaz, Jihong Kim, Vasileia Georgiou, Kin P. Cheung
Electron spin resonance (ESR) spectroscopy’s affinity for detecting paramagnetic free radicals, or spins, has been increasingly employed to examine a large variety of biochemical interactions. Such paramagnetic species are broadly found in nature and can

Interface-State Capture Cross Section — Why Does It Vary So Much?

April 20, 2015
Author(s)
Jason T. Ryan, Asahiko Matsuda, Jason P. Campbell, Kin P. Cheung
A capture cross section value is often assigned to Si-SiO2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the measurement

Frequency Modulated Charge Pumping with Extremely High Gate Leakage

February 13, 2015
Author(s)
Jason T. Ryan, Jibin Zou, Jason P. Campbell, Richard Southwick, Kin P. Cheung, Anthony Oates, Rue Huang
Charge pumping (CP) has proven itself as one of the most utilitarian methods to quantify defects in metal-oxide-semiconductor devices. In the presence of low to moderate gate leakage, CP quantification is most often implemented via a series of measurements

Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter

December 13, 2014
Author(s)
Guangfan Jiao, Jiwu Lu, Jason Campbell, Jason Ryan, Kin P. Cheung, Chadwin D. Young, Gennadi Bersuker
This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator patterns were

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

November 13, 2014
Author(s)
Jiwu Lu, Canute I. Vaz, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan, Kin P. Cheung, Gennadi Bersuker, Chadwin D. Young
Accurate reliability predictions of real world digital logic circuits rely heavily on the relevancy of device level testing. In the case of bias temperature instability (BTI), where recovery plays a significant role, a leap of faith is taken to translate

Impact of BTI on Random Logic Circuit Critical Timing

October 31, 2014
Author(s)
Kin P. Cheung, Jiwu Lu, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan
Bias temperature instability (BTI) is known to be a serious reliability issue for state-of-the-art Silicon MOSFET technology [1-6]. It is well-known that in addition to a “permanent” degradation, there is a large recoverable degradation component [7] that

Device-Level PBTI-induced Timing Jitter Increase in Circuit-Speed Random Logic Operation

July 31, 2014
Author(s)
Jiwu Lu, Canute I. Vaz, Jason P. Campbell, Jason T. Ryan, Kin P. Cheung, Guangfan Jiao, Gennadi Bersuker, Chadwin D. Young
We utilize eye-diagram measurements of timing jitter to investigate the impact of PBTI in devices subject to DC as well as ring oscillator (RO) and pseudo-random binary sequence (PRBS) stress waveforms. We observe that RO measurements miss the relevant

Accurate Fast Capacitance Measurements for Reliable Device Characterization

July 1, 2014
Author(s)
Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart
As device dimensions continue to scale, transient phenomena are becoming increasingly more important to understand for both performance and reliability considerations. Recently, fast capacitances versus voltage (CV) measurements have been gaining attention

Circuit Speed Timing Jitter Increase in Random Logic Operation after NBTI Stress

June 1, 2014
Author(s)
Guangfan Jiao, Jiwu Lu, Jason Campbell, Jason Ryan, Kin P. Cheung, Chadwin D. Young, Gennadi Bersuker
Recently, much effort has been spent trying to relate NBTI observations to real circuit impacts. While many of these efforts rely on circuit simulation to bridge this gap, an experimental approach is, of course, preferred. In this study we provide this

Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)

March 3, 2014
Author(s)
Jason T. Ryan, Jason P. Campbell, Jibin Zou, Kin P. Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract— We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a constant

Fast-Capacitance for Advanced Device Characterization

March 3, 2014
Author(s)
Pragya R. Shrestha, Kin P. Cheung, Jason T. Ryan, Jason P. Campbell, Helmut Baumgart
Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as

Reliability Monitoring For Highly Leaky Devices

May 31, 2013
Author(s)
Jason T. Ryan, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Richard Southwick, Anthony Oates
We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP signals

Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage

February 28, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Anthony Oates
Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique

Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?

January 31, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than

SERIES RESISTANCE: A MONITOR FOR HOT CARRIER STRESS

January 31, 2013
Author(s)
Jason P. Campbell, Serghei Drozdov, Kin P. Cheung, Richard G. Southwick, Jason T. Ryan, John S. Suehle, Anthony Oates
In this work, we examine a series resistance extraction technique which yields accurate values from single nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation and

On the Contribution of Bulk Defects on Charge Pumping Current

October 1, 2012
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
Frequency dependent charge pumping (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the charge pumping frequency -

Physical Model for Random Telegraph Noise Amplitudes and Implications

June 12, 2012
Author(s)
Richard G. Southwick, Kin P. Cheung, Jason P. Campbell, Serghei Drozdov, Jason T. Ryan, John S. Suehle, Anthony Oates
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the

Channel Length-Dependent Series Resistance?

June 10, 2012
Author(s)
Jason P. Campbell, Kin P. Cheung, Serghei Drozdov, Richard G. Southwick, Jason T. Ryan, Tony Oates, John S. Suehle
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range

Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction

December 15, 2011
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, Chadwin Young, John S. Suehle
We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implement than

When Does a Circuit Really Fail?

December 15, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Tony Oates, Phillip Wong, John S. Suehle

Circuit-Aware Device Reliability Criteria Methodology

September 12, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Anthony Oates, John S. Suehle, Phillip Wong
Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might be a

Spin Dependent Charge Pumping in SiC Metal-Oxide-Semiconductor Field-Effect-Transistors

August 25, 2011
Author(s)
Brad Bittel, Patrick Lenahan, Jason Ryan, Jody Fronheiser, Aivars Lelis
We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors (MOSFETs). SDCP combines a widely used electrical