Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub-Glass Transition Temperature

Published

December 18, 2017

Author(s)

Vasileia Georgiou, Dmitry Veksler, Jason T. Ryan, Jason P. Campbell, Pragya R. Shrestha, D. E. Ioannou, Kin P. Cheung

Abstract

An unexpected rapid anneal of electrically active defects in an ultra-thin (15.5 nm) polar polyimide film at and below glass transition temperature (Tg) is reported. The polar polymer is the gate dielectric of a thin-film-transistor (TFT). Gate leakage current density (Jg) through the polymer initially increases with temperature, as expected, but decreases rapidly at Tg – 60 °C. After approximately two minutes at Tg, the leakage is reduced by nearly three orders of magnitude. A concomitant observation is that drain current (Id) – gate voltage (Vg) hysteresis decreases with temperature, reaching zero at nearly the same temperature where Jg collapses. As Jg drops further, the drain current hysteresis increases again but in the opposite direction. This combination strongly supports the interpretation of rapid defect annealing.

Citation

Advanced Functional Materials

Pub Type

Journals

Keywords

defects annealing, polar polymer, glass transition temperature, CP1

Citation

Georgiou, V. , Veksler, D. , Ryan, J. , Campbell, J. , Shrestha, P. , Ioannou, D. and Cheung, K. (2017), Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub-Glass Transition Temperature, Advanced Functional Materials (Accessed December 7, 2024)