Towards reliable RRAM performance: macro- and microscopic analysis of operation processes

Published: November 09, 2017


Gennadi Bersuker, Dmitry Veksler, David M. Nminibapiel, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Maribeth Mason, Kin P. Cheung


Resistive RAM technology promises superior performance and scalability while employing well- developed fabrication processes. Conductance is strongly affected by structural changes in oxide insulators that make cell switching properties extremely sensitive to operation conditions. This opens an opportunity to condition the cell stack by forming a conductive filament capable of high frequency, low energy switching. Certain materials with pre-existing (as fabricated) conductive paths, in particular some poly-crystalline oxides, like hafnia, are shown to respond well to this approach. For this class of materials, the concept of ultra-fast pulse technique as an ultimate method for assessing RRAM switching operations is discussed. This technique prevents current overshoot, enabling compliance-free (1R) forming and reducing operation current and variability.
Citation: Journal of Computational Electronics
Pub Type: Journals

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RRAM technology, filament formation, instability, HfO2
Created November 09, 2017, Updated November 10, 2018