Resistive RAM technology promises superior performance and scalability while employing well- developed fabrication processes. Conductance is strongly affected by structural changes in oxide insulators that make cell switching properties extremely sensitive to operation conditions. This opens an opportunity to condition the cell stack by forming a conductive filament capable of high frequency, low energy switching. Certain materials with pre-existing (as fabricated) conductive paths, in particular some poly-crystalline oxides, like hafnia, are shown to respond well to this approach. For this class of materials, the concept of ultra-fast pulse technique as an ultimate method for assessing RRAM switching operations is discussed. This technique prevents current overshoot, enabling compliance-free (1R) forming and reducing operation current and variability.
Citation: Journal of Computational Electronics
Pub Type: Journals
RRAM technology, filament formation, instability, HfO2