Impact of RRAM Read Fluctuations on the Program-Verify Approach
David M. Nminibapiel, Dmitry Veksler, Pragya Shrestha, Jason Campbell, Jason Ryan, Helmut Baumgart, Kin P. Cheung
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this paper, we demonstrate that resistance state relaxation is not the main culprit. Instead, it is fluctuation-induced false-reading (triggering) that defeats the program-verify method, producing a large distribution tail immediately after programming. For the high resistance state (HRS), we show that while relaxation may occur to some degree, it does not dominate our observations.
, Veksler, D.
, Shrestha, P.
, Campbell, J.
, Ryan, J.
, Baumgart, H.
and Cheung, K.
Impact of RRAM Read Fluctuations on the Program-Verify Approach, IEEE Electron Device Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=922878
(Accessed July 3, 2022)