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Impact of RRAM Read Fluctuations on the Program-Verify Approach

Published

Author(s)

David M. Nminibapiel, Dmitry Veksler, Pragya Shrestha, Jason Campbell, Jason Ryan, Helmut Baumgart, Kin P. Cheung

Abstract

The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this paper, we demonstrate that resistance state relaxation is not the main culprit. Instead, it is fluctuation-induced false-reading (triggering) that defeats the program-verify method, producing a large distribution tail immediately after programming. For the high resistance state (HRS), we show that while relaxation may occur to some degree, it does not dominate our observations.
Citation
IEEE Electron Device Letters

Keywords

Fluctuations, Program-verify, Relaxation, RRAM

Citation

Nminibapiel, D. , Veksler, D. , Shrestha, P. , Campbell, J. , Ryan, J. , Baumgart, H. and Cheung, K. (2017), Impact of RRAM Read Fluctuations on the Program-Verify Approach, IEEE Electron Device Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=922878 (Accessed July 3, 2022)
Created May 21, 2017, Updated October 12, 2021