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Rapid and Accurate C-V Measurements



Jihong Kim, Pragya Shrestha, Jason Campbell, Jason Ryan, David M. Nminibapiel, Joseph Kopanski, Kin P. Cheung


We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the metal-oxide- semiconductor (MOS) capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to non-ideal behavior of real measurement systems. The key advance of this work is to extract the system response function using the same measurement set-up and a known MOS capacitor. The system response correction to the measured C-V curve of the unknown MOS capacitor can then be done by simple deconvolution. No de-skewing and/or leakage current correction is necessary, making it a very simple and quick measurement. Excellent agreement between the new fast C-V method and C-V measured conventionally by an LCR meter is achieved. The total time required for measurement and analysis is approximately 2 seconds, which is limited by our equipment.
IEEE Transactions on Electron Devices


MOS devices, Capacitance measurement, C-V measurement, Fast C-V measurement, Transient measurement


Kim, J. , Shrestha, P. , Campbell, J. , Ryan, J. , Nminibapiel, D. , Kopanski, J. and Cheung, K. (2016), Rapid and Accurate C-V Measurements, IEEE Transactions on Electron Devices, [online],, (Accessed June 20, 2024)


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Created September 30, 2016, Updated October 12, 2021