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Search Publications by: Yaw S. Obeng (Fed)

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Displaying 26 - 50 of 86

Microwave Monitoring of Atmospheric Corrosion of Interconnects

December 28, 2018
Author(s)
Papa Amoah, Dmitry Veksler, Christopher E. Sunday, Stephane Moreau, David Bouchu, Yaw S. Obeng
Traditional metrology has been unable to adequately address the reliability needs of emerging integrated circuits at the nano scale; thus, new metrology and techniques are needed. In this paper, we use microwave propagation characteristics (insertion

Metrology for the next generation of semiconductor devices

October 12, 2018
Author(s)
Ndubuisi G. Orji, Mustafa Badaroglu, Bryan M. Barnes, Carlos Beitia, Benjamin D. Bunday, Umberto Celano, Regis J. Kline, Mark Neisser, Yaw S. Obeng, Andras Vladar
The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering

Innovative Approaches to Combat Healthcare-Associated Infections Using Efficacy Standards Developed Through Industry and Federal Collaboration

October 5, 2018
Author(s)
Dianne L. Poster, Carl C. Miller, Yaw S. Obeng, Michael T. Postek, Troy E. Cowan, Richard A. Martinello
Nation-wide, healthcare-associated infections (HAIs) infect one in every 25 hospital patients, account for more than 100,000 deaths and increase medical costs by around $96-147B, each year. Ultraviolet-C (UV-C) antimicrobial devices are shown to reduce the

Virtual Metrology White Paper - INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS(IRDS)

April 9, 2018
Author(s)
Ndubuisi G. Orji, Yaw S. Obeng, Carlos Beitia, Supika Mashiro, James Moyne
This white paper provides an overview of virtual metrology (VM) and the benefits it can provide, with cost reduction (both capital expenditure and cycle time) being the primary benefit. The white paper also examines some of the issues preventing wider

Remote Bias Induced Electrostatic Force Microscopy for Subsurface Imaging

March 5, 2018
Author(s)
Joseph J. Kopanski, Lin You, Yaw S. Obeng
Contrast in electrostatic force microscopy (EFM) depends on the electrostatic force between the tip and sample. In the related technique, scanning Kelvin force microscopy (SKFM), contrast arises from the force due to the capacitance gradient with tip-to

Microwave Evaluation of Electromigration Susceptibility in Advanced Interconnects

November 1, 2017
Author(s)
Yaw S. Obeng, Kin P. Cheung, Dmitry Veksler, Christopher E. Sunday
Traditional metrology has been unable to adequately address the needs of emerging integrated circuits (ICs) at the nano scale; thus, new metrology and techniques are needed. For example, the reliability challenges in fabrication need to be well understood

The Impact of Organic Additives On Copper Trench Microstructure

June 28, 2017
Author(s)
James B. Marro, Chukwudi A. Okoro, Yaw S. Obeng, Kathleen C. Richardson
Organic additives are typically used in the pulse electrodeposition of copper (Cu) to prevent void formation during the filling of high aspect ratio features. In this work, the role of bath chemistry as modified by organic additives was investigated for

Characterization of Buried Interfaces with Scanning Probe Microscopes

May 19, 2016
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng
Scanning probe microscopes (SPMs) have some capability to image sub-surface structure, including the details of buried interfaces. This paper describes the theoretical and practical basis for obtaining information about shallow buried interfaces

Low Frequency Radio Wave Detection of Electrically Active Defects in Dielectrics

May 19, 2016
Author(s)
Yaw S. Obeng, Chukwudi A. Okoro, Pavel Kabos, Rhonda R. Franklin, Papa K. Amoah
In this paper, we discuss the use of low frequency (up to 300 MHz) radio waves (RF) to detect and characterize electrical defects present in the dielectrics of emerging integrated circuit devices. As an illustration, the technique is used to monitor the

Hardware Security Thorough Supply Chain Assurance

April 28, 2016
Author(s)
Yaw S. Obeng, David A. Brown, Colm Nolan
This paper examines the current issues pertaining to the hardware security and how they could affect the overall security of applications such as the internet of things. Specifically, we review the ongoing industry-led activities aimed at mitigating the

Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits

October 11, 2015
Author(s)
Yaw S. Obeng, Chukwudi A. Okoro, Jungjoon Ahn, Lin You, Joseph J. Kopanski
The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based

iNEMI Project on Automotive Electronic Material Challenges

September 3, 2015
Author(s)
Yaw S. Obeng
Automobiles are incorporating more and more electronics from various industry sectors that have not been optimally designed for use inside the vehicle passenger compartment. Reliability and cost are two key considerations when incorporating traditional

Nanoelectronic Structural Information with Scanning Probe Microscopes

June 14, 2015
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng
Scanning probe microscope (SPM) based methods to obtain subsurface structural information about nano-structured materials are described. A test structure chip containing structures to produce various surface electric field gradients, spatially varying

Experimentally, How Does Cu TSV Diameter Influence its Stress State?

May 27, 2015
Author(s)
Chukwudi A. Okoro, Lyle E. Levine, Yaw S. Obeng, Ruqing Xu
In this work, an experimental study of the influence of Cu through-silicon via (TSV) diameter on stress build up was performed using synchrotron-based X-ray microdiffraction technique. Three Cu TSV diameters were studied; 3 µm, 5 µm and 8 µm, all of which