Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits

Published

October 11, 2015

Author(s)

Yaw S. Obeng, Chukwudi A. Okoro, Jungjoon Ahn, Lin You, Joseph J. Kopanski

Abstract

The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based metrology, based on dielectric spectroscopy, for detecting and characterizing electrically active defects in fully integrated 3D devices. These defects are traceable to the chemistry of the insolation dielectrics used in the through silicon via (TSV) construction. We show that these defects may be responsible for some of the unexplained early reliability failures observed in TSV enabled 3D devices.

Citation

ECS Transactions

Volume

69

Pub Type

Journals

Keywords

dielectric, spectroscopy, 3D-IC, defects, isolation layer, TSV

Citation

Obeng, Y. , Okoro, C. , Ahn, J. , You, L. and Kopanski, J. (2015), Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits, ECS Transactions (Accessed October 8, 2024)