Published: October 11, 2015
Yaw S. Obeng, Chukwudi A. Okoro, Jungjoon Ahn, Lin You, Joseph J. Kopanski
The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based metrology, based on dielectric spectroscopy, for detecting and characterizing electrically active defects in fully integrated 3D devices. These defects are traceable to the chemistry of the insolation dielectrics used in the through silicon via (TSV) construction. We show that these defects may be responsible for some of the unexplained early reliability failures observed in TSV enabled 3D devices.
Citation: ECS Transactions
Pub Type: Journals
dielectric, spectroscopy, 3D-IC, defects, isolation layer, TSV
Created October 11, 2015, Updated February 19, 2017