Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Die-lectric Thin Films for Micro- and Nanoelectronic Applications

Published

August 29, 2017

Author(s)

Christopher E. Sunday, Papa Amoah, Karl Montgomery, Yaw S. Obeng

Abstract

In this paper, we discuss the use of broadband microwaves (MW) to characterize the thermal stability of organic and hybrid silicon-organic thin films meant for insulation applications in micro- and nanoelectronic devices. We take ad-vantage of MW propagation characteristics to extract and examine the relationships between electrical properties and the chemistry of prototypical low-k materials. The impact of thermal anneal at modest temperatures is examined to shed light on the thermal-induced performance and reliability changes with-in the dielectric films. These changes are then correlated with the chemical changes in the films. These insights provide basis for rational selection of organic dielectrics for integrated devices.

Citation

ECS Journal of Solid State Science and Technology

Volume

6

Issue

9

Pub Type

Journals

Download Paper

https://doi.org/10.1149/2.0141709jss

Local Download

Keywords

low-k dielectric, broadband, microwave, thermal stability, decomposition, FTIR, attenuation constant

Citation

Sunday, C. , Amoah, P. , Montgomery, K. and Obeng, Y. (2017), Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Die-lectric Thin Films for Micro- and Nanoelectronic Applications, ECS Journal of Solid State Science and Technology, [online], https://doi.org/10.1149/2.0141709jss, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=923461 (Accessed October 10, 2025)