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Search Publications by: William A. Kimes (Fed)

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Displaying 1 - 25 of 33

Comparison of saturator designs for low volatility liquid precursor delivery

April 1, 2023
Author(s)
James E. Maslar, William A. Kimes, Vladimir B. Khromchenko, Brent Sperling, Ravindra Kanjolia
Low volatility precursors are widely utilized in chemical vapor deposition and atomic layer deposition processes. Such precursors are often delivered from one of two common saturator designs: a bubbler or a flow over vessel. Previous reports concerning

Certification of NIST Gas Mixture Standard Reference Materials

February 10, 2022
Author(s)
Christina Cecelski, Kimberly Harris, Cassie Goodman, William A. Kimes, Philip Liu, Walter R. Miller Jr., Jennifer Carney
The Gas Sensing Metrology Group at NIST provides accurate, stable gaseous standards for use in various types of emissions testing and environmental monitoring. The group develops and maintains the highest level of primary gas standards, which provide

Characterization of bubbler performance for low-volatility liquid precursor delivery

June 27, 2019
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling, Ravindra K. Kanjolia
The performance of a bubbler to deliver the low-volatility, liquid cobalt precursor μ2- η2-(tBu- acetylene) dicobalthexacarbonyl (CCTBA) for reduced-pressure chemical vapor deposition and atomic layer deposition processes was characterized. A relatively

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition

July 12, 2017
Author(s)
Berc Kalanyan, William A. Kimes, Ryan Beams, Stephan J. Stranick, Elias J. Garratt, Irina Kalish, Albert Davydov, Ravindra Kanjolia, James E. Maslar
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely

In-Situ Metrology to Characterize Water Vapor Delivery during Atomic Layer Deposition

May 2, 2016
Author(s)
Tariq Ahmido, William A. Kimes, Brent A. Sperling, Joseph T. Hodges, James E. Maslar
Water is often employed as the oxygen source in metal oxide atomic layer deposition (ALD) processes. It has been reported that variations in the amount of water delivered during metal oxide ALD can impact the oxide film properties. Hence, one contribution

Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis(dimethylamido)titanium and water

April 23, 2014
Author(s)
Brent A. Sperling, John Hoang, William A. Kimes, James E. Maslar, Kristen L. Steffens, Nhan V. Nguyen
Atomic layer deposition of titanium dioxide using tetrakis(dimethylamido)titanium (TDMAT) and water vapor is studied by reflection-absorption infrared spectroscopy (RAIRS) with a time resolution of 120 ms. Decomposition of the adsorbed TDMAT is observed

Time-resolved surface infrared spectroscopy during atomic layer deposition

September 10, 2013
Author(s)
Brent A. Sperling, John J. Hoang, William A. Kimes, James E. Maslar
This work presents a novel method for obtaining surface infrared spectra with sub-second time resolution during atomic layer deposition (ALD). Using a rapid-scan Fourier transform infrared (FT-IR) spectrometer, we obtain a series of interferograms (120 ms)

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

April 30, 2013
Author(s)
Hao Zhu, Curt A. Richter, Erhai Zhao, John E. Bonevich, William A. Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A. Kirillov, James E. Maslar, D. E. Ioannou, Qiliang Li
Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampered by

In Situ Gas Phase Diagnostics for Titanium Nitride Atomic Layer Deposition

October 14, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. In this

In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition

July 12, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor

Thin-Film Resistance Thermometers on Silicon Wafers

March 3, 2009
Author(s)
Kenneth G. Kreider, Dean C. Ripple, William A. Kimes
Thermal processing of semiconductors is a critical, capital intensive step in achieving high yields and profitability in the manufacturing of electronic chips such as ASICs and DRAMs. Many techniques have been developed to control the temperature of the

In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition

January 1, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, Donald R. Burgess Jr., William A. Kimes, Nhan V. Nguyen, Elizabeth F. Moore, Joseph T. Hodges
Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high  dielectric layers required for many nanoelectronics applications. In situ monitoring of ALD processes has the potential to yield insights that will